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Carbon Incorporation in Si1-yCy Alloys Grown by Ultrahigh Vacuum Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

A. C. Mocuta  and
D. W. Greve
A. C. Mocuta
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon university, Pittsburgh, PA 15213
D. W. Greve
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon university, Pittsburgh, PA 15213
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Abstract

Thin heteroepitaxial Si1-yCy films have been grown on Si (100) by Ultrahigh Vacuum Chemical Vapor Deposition (UHV/CVD) using silane and methylsilane as silicon and carbon precursors. Carbon incorporation has been studied in the growth temperature range of 550°C to 650°C. The layers have been characterized using high resolution X-ray diffraction and secondary ion mass spectrometry. The total carbon content of the alloys increases linearly with the methylsilane partial pressure and a methylsilane sticking coefficient approximately 2 times higher than that of silane was extracted. Layers with up to 1.34 % substitutional carbon have been obtained at the lowest growth temperature. Fully substitutional carbon can be obtained for levels up to 0.65%. Variations of the growth rate with temperature and carbon content are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 275
Copyright
Copyright © Materials Research Society 1998

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References

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