Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-06-20T12:47:32.972Z Has data issue: false hasContentIssue false
  • English
  • Français

Application of Channeling Techniques and High Resolution Transmission Electron Microscopy to Ion-Beam Damaged Zircon

Published online by Cambridge University Press:  16 February 2011

N. Bordes  and
R.C. Ewing
N. Bordes
Affiliation:
Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, NM 87131-1116, USA
R.C. Ewing
Affiliation:
Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, NM 87131-1116, USA
Get access

Abstract

Zircon (ZrSiO4) samples were irradiated at 100K with 400 keV Ar+ and Xe+ ion beams to fluences ranging from 5x1013 to 5x1015 ions/cm2. Rutherford backscattering spectroscopy (RBS) experiments were completed to study the dechanneling of He ions in the irradiated zircons. Cross-sections of some irradiated samples were prepared, and the zircon microstructure was examined by highresolution transmission electron microscopy (HRTEM). At doses greater than 8x1014 ions/cm2 or 0.8 dpa (displacements per atom), RBS channeling experiments showed the presence of a disordered or amorphous layer. The electron microscopy confirmed the presence of an amorphous layer extending over a depth of 300 to 350 nm (Ar+ irradiation) and 200 nm (Xe+ irradiation) in agreement with the damage layer depth calculated by TRIM. At depths extending beyond the damage peak, TEM reveals an amorphous layer with “islands” of crystalline material of σ 30 nm in size. These experiments show that RBS and TEM are complementary techniques in investigating radiation effects in irradiations of bulk ceramic.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 371
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chakoumakos, B.C., Murakami, T., Lumpkin, G.R., Ewing, R.C., Science 236, 1556, (1987).Google Scholar
2. Holland, H.D., Gottfried, D., Acta Crystallogr. 8, 291, (1955).Google Scholar
3. Wang, L.M., Eby, R.K., Janeczek, J., Ewing, R.C., Nucl. Instr. and Meth. B59/60, 395, (1991).Google Scholar
4. Wang, L.M., Ewing, R.C., Nucl. Instr. and Meth. B 65, 324, (1992).Google Scholar
5. Wang, L.M., Ewing, R.C., Weber, W.J., Eby, R.K., MRS Symp. Proc. 279, 451, (1993).Google Scholar
6. Weber, W.J., Wang, L.M., Ewing, R.C., J. Mater. Res. 9(3), 688 (1994).Google Scholar
7. Ziegler, J.F., Biersack, J.P., Littmark, U., The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).Google Scholar
8. Doolittle, L.R., Nucl. Instr. and Meth. B 9, 344, (1985).Google Scholar
9. Miller, M.L., Ewing, R.C., Ultramicroscopy 48, 203, (1993).Google Scholar