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Application of Channeling Techniques and High Resolution Transmission Electron Microscopy to Ion-Beam Damaged Zircon

Published online by Cambridge University Press:  16 February 2011

N. Bordes  and
R.C. Ewing
N. Bordes
Affiliation:
Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, NM 87131-1116, USA
R.C. Ewing
Affiliation:
Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, NM 87131-1116, USA
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Abstract

Zircon (ZrSiO4) samples were irradiated at 100K with 400 keV Ar+ and Xe+ ion beams to fluences ranging from 5x1013 to 5x1015 ions/cm2. Rutherford backscattering spectroscopy (RBS) experiments were completed to study the dechanneling of He ions in the irradiated zircons. Cross-sections of some irradiated samples were prepared, and the zircon microstructure was examined by highresolution transmission electron microscopy (HRTEM). At doses greater than 8x1014 ions/cm2 or 0.8 dpa (displacements per atom), RBS channeling experiments showed the presence of a disordered or amorphous layer. The electron microscopy confirmed the presence of an amorphous layer extending over a depth of 300 to 350 nm (Ar+ irradiation) and 200 nm (Xe+ irradiation) in agreement with the damage layer depth calculated by TRIM. At depths extending beyond the damage peak, TEM reveals an amorphous layer with “islands” of crystalline material of σ 30 nm in size. These experiments show that RBS and TEM are complementary techniques in investigating radiation effects in irradiations of bulk ceramic.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 371
Copyright
Copyright © Materials Research Society 1995

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References

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