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Anodic sulfidation and model characterisation of GaAs (100) in (NH4)2 Sx solution

Published online by Cambridge University Press:  10 February 2011

R. F. Elbahnasawy ,
J. G. Mclnerney ,
P. Ryan ,
G. Hughes  and
M. Murtagh
R. F. Elbahnasawy
Affiliation:
Department of Physics, National university of Ireland, University College, Cork, Ireland.
J. G. Mclnerney
Affiliation:
Department of Physics, National university of Ireland, University College, Cork, Ireland.
P. Ryan
Affiliation:
Department of Physics, Dublin City University, Ireland.
G. Hughes
Affiliation:
Department of Physics, Dublin City University, Ireland.
M. Murtagh
Affiliation:
National Microelectronics Research Center, National University of Ireland, University College, Cork, Ireland.
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Abstract

Electrochemical sulfidation of n-type GaAs (100) has been investigated under anodic conditions with a view to surface passivation for improved electronic and optical properties. This treatment has successfully removed the native oxide and formed a thick layer of gallium and arsenic sulfides displaying high durability against oxidation and optical degradation compared to conventional dipping treatment using (NH4)2S solution. X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and atomic force microscopy (AFM) have been used to characterize the treated surfaces. These studies have been used to devise a structural model of the near-surface region. The results of Raman backscattering spectroscopy measurements indicate that there is a 35% reduction of the surface barrier height compared to the untreated surface. This passivation technique has been shown to be effective in reducing surface band bending on GaAs (100) and enhancing the chemical stability of the surface, making it more suitable for electronic and optoelectronic device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 265
Copyright
Copyright © Materials Research Society 1999

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References

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