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Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by Movpe

Published online by Cambridge University Press:  28 February 2011

Qing Sun ,
D. Morris ,
C. Lacelle  and
A.P. Roth
Qing Sun
Affiliation:
Division of Physics, NRC 100 Sussex Dr. Ottawa, Canada
D. Morris
Affiliation:
Division of Physics, NRC 100 Sussex Dr. Ottawa, Canada
C. Lacelle
Affiliation:
Division of Physics, NRC 100 Sussex Dr. Ottawa, Canada
A.P. Roth
Affiliation:
Division of Physics, NRC 100 Sussex Dr. Ottawa, Canada
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Abstract

Anisotropic electron transport has been observed in InxGa1-xAs/GaAs heterostructures grown by MOVPE on (001) and intentionally misoriented GaAs substrates. The low field electron mobilities in two perpendicular directions are found to be higher in the [110] direction than in the [110] direction. The ratio of µ[110]/µ[110] derived from Hall measurements is related to the degree of substrate misorientation as well as epilayer composition. Finally, the photoluminescence spectra are polarized along orthogonal <110> directions. These anisotropic properties are directly related to the anisotropy of [110] and [110] dislocations due to lattice mismatch between the substrates and the layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 783
Copyright
Copyright © Materials Research Society 1990

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