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Anisotropic Surface Roughness in Strain Relaxed In0.40GA0.60As on Gaas with a Step-Graded InxGA1-xAs Buffer Layer

Published online by Cambridge University Press:  15 February 2011

J. C. P. Chang ,
B. K. Kad ,
S. R. Nutt  and
K. L. Kavanagh
J. C. P. Chang
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
B. K. Kad
Affiliation:
Department of Applied Mechanics & Engineering Science, University of California at San Diego, La Jolla, California 92093
S. R. Nutt
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
K. L. Kavanagh
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407
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Abstract

We report the structural characterization of the 3-D relaxation morphology of In0.4Ga0.6As grown on a step-graded InxGa1-xAs buffer layer on GaAs. Scanning electron microscopy showed “grooves” spaced on the order of microns running only in the [110] direction. Each groove was observed with cross-sectional transmission electron microscopy to mark the location of a vertical low-angle tilt and/or twist boundary. The veiy rough layer morphology may be the result of island coalescence or severe surface roughness that created the grain boudnaries as the layer grew. Strain relaxation in the In0.4Ga0.6As layer was much reduced in the [101] in-plane direction. The asymmetry in residual in-plane strains in the In0.3Ga0.7AS layer and/or the increased In composition may be responsible for the development of an anisotropic surface roughness. X-ray microanalysis revealed a periodic variation in layer composition which correlated with a fine contrast modulation presumably the result of phase segregation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 107
Copyright
Copyright © Materials Research Society 1993

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