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An Investigation of the Electron Escape Time within a Biased AlGaN/GaN Quantum Well

Published online by Cambridge University Press:  10 February 2011

Kevin R. Lefebvre  and
A. F. M. Anwar
Kevin R. Lefebvre
Affiliation:
Electrical and Systems Engineering, University of Connecticut, Storrs, CT 06269–2157
A. F. M. Anwar
Affiliation:
Electrical and Systems Engineering, University of Connecticut, Storrs, CT 06269–2157
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Abstract

In this paper, the electron escape time from an Al.25Ga.75N/GaN/Al.25Ga.75N quantum well system is calculated as a function of electric field. The calculation includes the piezoelectric field induced by the material system, the continuous density of states within a quantum well as a result of the applied electric field, the change in the group velocity and the proper partitioning of between the tunneling and thermionic emission currents. The calculation of the escape time is achieved by solving Schroedinger equation, through the logarithmic derivative of the wavefunctions, and Poisson's equation self-consistently.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 827
Copyright
Copyright © Materials Research Society 1998

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References

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