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An Investigation of the Al/n-GaAs Diodes with High Schottky Barrier Heights

Published online by Cambridge University Press:  21 February 2011

C-P. Chen ,
Y. A. Chang  and
T.F. Kuech
C-P. Chen
Affiliation:
Univ. of Wisconsin-Madison, Materials Science and Engineering Department, 1509 University Ave., Madison, WI. 53706
Y. A. Chang
Affiliation:
Univ. of Wisconsin-Madison, Materials Science and Engineering Department, 1509 University Ave., Madison, WI. 53706
T.F. Kuech
Affiliation:
Univ. of Wisconsin-Madison, Chemical Engineering Department, 1415 Johnson Dr., Madison, WI. 53706
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Abstract

Thermally stable Al/n-GaAs Schottky contacts, up to annealing temperature at 500 °C for 20 seconds, have been realized by sputter deposition from an Al target to (100) n-GaAs at a base pressure ∼2×10−7 Torr. The Schottky barrier height was 0.75 eV (0.9 eV) when using the I-V (C-V) method with an ideality factor of 1.09 for the as-deposited samples. The Schottky barrier height increased to 0.97 eV (1.06 eV) with an ideality factor of 1.07 after annealing at 400 °C for 20 seconds. This barrier height, 0.97 eV, is the highest value reported for Al/n-GaAs diodes. The interfacial stability between Al and GaAs has been examined by cross section transmission electron microscopy. A (200) dark field cross section transmission electron microscopy image of the contact after annealing at 600 °C showed that the (Ga,Al)As phase formed at the interface and the enhancement of the Schottky barrier height was due to the formation of this phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 147
Copyright
Copyright © Materials Research Society 1994

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References

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