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Wafer Bonding of Diamond Films to Silicon for Silicon-on-Insulator Technology

Published online by Cambridge University Press:  15 March 2011

Gleb N. Yushin
Affiliation:
North Carolina State Univ, Dept. of Material Science, Raleigh, NC 27695, U.S.A.
Scott D. Wolter
Affiliation:
North Carolina State Univ, Dept. of Material Science, Raleigh, NC 27695, U.S.A.
Alexander V. Kvit
Affiliation:
North Carolina State Univ, Dept. of Material Science, Raleigh, NC 27695, U.S.A.
Ramon Collazo
Affiliation:
North Carolina State Univ, Dept. of Material Science, Raleigh, NC 27695, U.S.A.
John T. Prater
Affiliation:
Army Research Office, RTP, NC, U.S.A.
Brian R. Stoner
Affiliation:
MCNC, Material and Electronic Technologies Division, RTP, NC 27709, U.S.A.
Zlatko Sitar
Affiliation:
North Carolina State Univ, Dept. of Material Science, Raleigh, NC 27695, U.S.A.
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Abstract

Polycrystalline diamond films previously grown on silicon were polished to an RMS roughness of 15 nm and bonded to the silicon in a dedicated ultrahigh vacuum bonding chamber. Successful bonding under a uniaxial mechanical stress of 32 MPa was observed at temperatures as low as 950°C. Scanning acoustic microscopy indicated complete bonding at fusion temperatures above 1150°C. Cross-sectional transmission electron microscopy later revealed a 30 nm thick intermediate amorphous layer consisting of silicon, carbon and oxygen.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

1. Silicon-On-Insulator Technology: Materials to VLSI edited by Colonge, J.-P., 2nd ed. (Kluwer Academic Publishers, Norwell, 1993) pp. 52.Google Scholar
2. Wolter, S. D., Stoner, B. R., Glass, J. T., Ellis, P. J., Buhaenko, D. S., Jenkins, C. E., and Southworth, P., Appl. Phys. Lett 62, 1215 (1993).CrossRefGoogle Scholar
3. Wolter, S. D., Yushin, G. N., Okuzumi, F., Stoner, B. R., Prater, J. T., and Sitar, Z., accepted for publication in Diamond and Related Materials.Google Scholar
4. Tong, Q. Y., Gösele, U., Semiconductor Wafer Bonding: Science and Technology, (Wiley-Interscience Publication, New York, 1999).Google Scholar

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