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Wafer Bonding Involving Complex Oxides

Published online by Cambridge University Press:  10 February 2011

M. Alexe ,
P. Kopperschmidt ,
U. Gösele ,
Qin-Yi Tong  and
Li-Juan Huang
M. Alexe
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle/Saale, Germany
P. Kopperschmidt
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle/Saale, Germany
U. Gösele
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle/Saale, Germany
Qin-Yi Tong
Affiliation:
School of Engineering, Duke University, Durham, NC
Li-Juan Huang
Affiliation:
School of Engineering, Duke University, Durham, NC
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Abstract

The present paper proposes a simple method which may be able to provide true single-crystal films of complex oxides on large substrates including semiconductors like silicon or gallium arsenide. The method describes a layer transfer process using layer splitting by hydrogen implantation and direct wafer bonding (DWB) to obtain single-crystal oxide films on different substrates. Alternatively, a fabrication process of ferroelectric-semiconductor heterostructures based on direct wafer bonding and layer transfer is also described. This process is an alternative method to the direct deposition of oxides films (ferroelectric, high-k) on silicon and allows fabrication of metal oxide-silicon heterostructures with an interface having a good structural quality as well as a low trap density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 285
Copyright
Copyright © Materials Research Society 1999

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References

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