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Thermodynamics and Kinetics of Crystallization of Amorphous Si and Ge Produced by Ion Implantation

Published online by Cambridge University Press:  25 February 2011

E.P. Donovan ,
F. Spaepen ,
D. Turnbull ,
J.M. Poate  and
D.C. Jacobson
E.P. Donovan
Affiliation:
Division of Applied Sciences, Harvard University, 29 Oxford Street,Cambridge, MA 02138;
F. Spaepen
Affiliation:
Division of Applied Sciences, Harvard University, 29 Oxford Street,Cambridge, MA 02138;
D. Turnbull
Affiliation:
Division of Applied Sciences, Harvard University, 29 Oxford Street,Cambridge, MA 02138;
J.M. Poate
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
D.C. Jacobson
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

Amorphous Si and Ge layers, produced by noble gas (Ar or Xe) implantation of single crystal substrates, have been crystallized in a differential scanning calorimeter (DSC). This technique allows determination of the growth velocity (which is proportional to the rate of heat evolution, ΔHac), and the total enthalpy of crystallization ΔHacAmorphous Ge was found to relax continuously to an amorphous state of lower free energy, with a total enthalpy of relaxation of 6.0 kJ.mole−1 before crystallization started. The regrowth velocity on (100) substrates,measured to be 4.2×1017 exp (−2.17eV/kT)Å/sec, is compared to other determinations. The value of ΔHac was found to be 11.66± 0.7 kJ.mole, in good agreement with ΔHac for amorphous Ge produced by other methods. For Si, ΔHac was determined to be 11.95± 0.7 kJ.mole without any evidence of heat release due to relaxation. The kinetics of crystallization measured by DSC are compared with those determined by other techniques. The effects of the implant profile on the regrowth velocity could also be observed directly in the DSC signal. The more accurate value of ΔHac allowed a more precise determination of the melting temperature of amorphous Si: Taℓ= 1420K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 211
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Fan, J.C.C. and Andersen, H., J. Appl. Phys. 52, 4003 (1981).Google Scholar
2. Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M., and Jacobson, D.C., Appl. Phys. Lett. 42, 698 (1983).Google Scholar
3. Baeri, P.,Foti, G.,Poate, J.M., and Cullis, A.G., Phys. Rev. Lett. 45, 2036 (1980).Google Scholar
4. Poate, J.M.,Mat. Res. Soc. Symp. Proc. 13, 263 (1983).Google Scholar
5. Donovan, E.P., Spaepen, F. Turnbull, D., Poate, J.M., and Jacobson, D.C., to be published.Google Scholar
6. Polk, D.E.,J. Non-Cryst. Solids 5, 365 (1971).Google Scholar
7. Csepregi, L Kullen, R.P.,Mayer, J.W., and Sigmon, T.W.,Sol. St. Comm. 21, 1019 (1977).Google Scholar
8. Chen, H.S. and Turnbull, D., J. Appl. Phys. 40, 4214 (1969).Google Scholar
9. Temkin, R.J. andPaul, W., Proc. 5th Int. Conf. on Amorphous and Liquid Semiconductors, Stuke, J. and Brenig, W., eds. (Taylor and Francis, London 1974) p. 1193.Google Scholar
10. Spaepen, F. and Turnbull, D., in: Laser Annealing of Semiconductors,Poate, J.M. Mayer, and J.W., eds. Academic, New York 1982) p. 15.Google Scholar
11. Csepregi, L,Kennedy, E.F. Gallagher, T.J., Mayer, J.W., and Sigmon, T.W., J. Appl. Phys. 48, 4234 (1977).Google Scholar
12. Csepregi, L, Kennedy, E.F.,Mayer, J.W., and Sigmon, T.W.,, J. Appl. Phys. 49, 3906 (1978).Google Scholar
13. Lietoila, A. Gold, , R.B., Gibbons, J.F. Sigmon, , T.W., Scovell, P.D., and Young, J.M., J. Appl. Phys. 52, 30 (1981).Google Scholar
14. Lietoila, A. Wakita, , A. Sigmon, T.W., and Gibbons, J.F. J. Appl. Phys. 53, 4399 (1982).Google Scholar
15. Olson, G.L., Kokorowski, S.A.,Roth, J.A., andHess, L.D., Mat. Res. Soc. Symp. Proc. 13,141 (1983).Google Scholar
16. Kokorowski, S.A.,Olson, G.L. Roth, J.A., and Hess, L.D., Phys. Rev. Lett.48, 498 (1982).Google Scholar
17. Nygren, E.and Spaepen, F., unpublished results.Google Scholar
18. Keating, P.N.,Phys. Rev. 145,637 (1966).Google Scholar
19. Spaepen, F., in: Amorphous Materials: Modeling of Structure and Properties,Vitek, V., ed. (TMS-AIME, New York 1983) p. 265.Google Scholar
20. Spaepen, F, Phil. Mag. 30, 417 (1974).Google Scholar