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Tem Characterization of Dislocations in GaAs-ON-Si Heterostructures Wite Sjpereatlice Intermediate Iayers

Published online by Cambridge University Press:  28 February 2011

T. Soga ,
H. Nishikawa ,
T. Jimbo  and
M. Umeno
T. Soga
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
H. Nishikawa
Affiliation:
Department of Physics, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Jimbo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
M. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

GaAs was grown on Si substrate by metalorganic chemical vapor deposition using GaAs/GaAsP strained layer superlattice (SLS) intermediate layers. The dislocation density decreases at the interface between GaAs and SLS, but does not decrease in the SLS. When GaAs/GaAsP SLS is used as the intermediate layer, a part of the dislocation propagates into the top GaAs layer because of the lattice mismatch of GaAs and SLS. The low etch-pit-density of (3-5) x 105 cm−2 was obtained by using the intermediate layer of GaAs/GaAsP SLS and AlAs/GaAs superlattice with thermal-cycle annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 201
Copyright
Copyright © Materials Research Society 1990

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References

1. Yamaguchi, M., Sugo, M., and Itoh, Y., Appl.Phys.Lett. 54, 2568 (1989).Google Scholar
2. Soga, T., Nozaki, S., Noto, N., Nishikawa, H., Jimbo, T., and Umeno, M., Jpn. J. Appl. Phys. 28, 2441 (1989).Google Scholar
3. Soga, T., Kohama, Y., Uchida, K., Tajima, M., Jimbo, T., and Umeno, M., J. Crystal Growth 93, 499 (1988).Google Scholar
4. Akiyama, M., Kawarada, Y., and Kaminishi, M., Jpn.J.Appl.Phys. 23, L843 (1984).Google Scholar
5. Matthews, J.W. and Blakeslee, A.E., J.Crystal Growth 27, 118 (1974).Google Scholar
6. Watanabe, Y., Kadota, Y., Okamoto, H., Seki, M., and Ohmachi, Y., J. Crystal Growth 93, 459 (1988).Google Scholar
7. Shinohara, M., Appl.Phys.Lett. 52, 543 (1988).Google Scholar