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A Technique for In—Situ Detection of Growth Dislocations

Published online by Cambridge University Press:  28 February 2011

S. D. Peteves ,
J. A. Sarreal  and
G. J. Abbaschian
S. D. Peteves
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
J. A. Sarreal
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
G. J. Abbaschian
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
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Abstract

A formidable obstacle to develop the optimal conditions for growing dislocation—free crystals has been the lack of a direct technique to monitor the perfection of the solid/liquid (S/L) interface during growth. Recently we have developed a technique which detects, in—situ, the emergence of dislocation(s) at the crystallization front. This novel technique is based on the thermoelectric principles, and utilizesthe dependence of the Seebeck emf generated across the S/L interface upon the interface temperature, crystal orientation, and dopant concentration. The technique was used to directly measure the S/L interface temperature during growth of Ga and In—doped Ga. For the latter, the technique also shows the breakdown (instability) of the faceted interface, which leads to the entrapment of the In—rich bands. The applicability of the technique to monitor defect formation during crystal growth processes such as thin film zone, Czochralski, or liquid phase epitaxy will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 323
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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