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Study on the effect of Silicon surface cleaning processes on Gate Oxide Integrity
Published online by Cambridge University Press: 10 February 2011
Abstract
The effect of different silicon wafer surface preparation in modulating gate oxide quality performance has been studied through an experimental design which examines key phases of wafer cleaning and polishing processes. An interpretation of the root causes of GOI degradation has been proposed and discussed.
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- Copyright © Materials Research Society 1997