SiC Power Devices – An Overview

Anant Agarwal; Mrinal Das; Sumithra Krishnaswami; John Palmour; James Richmond; Sei-Hyung Ryu

doi:10.1557/PROC-815-J1.1

Abstract

An overview of SiC Power Devices is provided. Progress in 1200 V SiC Schottky diodes, 1200 V SiC BJTs, 10-20 kV SiC PiN diodes and 2 kV SiC Power MOSFETs will be described. SiC Schottky diodes have already been commercialized. The next step of inserting these diodes in Si IGBT modules is happening now. Emphasis is placed on the problems and issues at the SiC device/process interface which need to be urgently addressed such as the roughness created during the implant anneals, reliability of the gate oxide under positive and negative bias, low current gain of the BJTs, forward voltage instability in the pn junctions etc. Overcoming these issues in the near future will be critical to the successful commercialization of SiC devices.

References

REFERENCES

[1] Agarwal, Anant K. et al. , “Large Area, 1.3 kV, 17 A, Bipolar Junction Transistors in 4H- SiC,” ISPSD Proceedings, pp. 135–138, 2003.Google Scholar

[2] Lendenmann, H., Bergman, J.P., Dahlquist, F., and Hallin, C., Mat. Sci. Forum 433–436 (2003) 901.Google Scholar

[3] Sumakeris, J., Das, M., Hobgood, H., Müller, S., Paisley, M., Ha, S., Skowronski, M., Palmour, J. and Carter, C. Jr., ICSCRM 2003, Oct 2003, Lyon, France.Google Scholar

[4] Sanders, J.W., Master's Thesis, Purdue University, 1994.Google Scholar

[5] Shenoy, J.N., Chindalore, G.L, Melloch, M.R., Cooper, J.A. Jr., Palmour, J.W., and Irvine, K.G.: J. Electron. Mater. Vol. 24 (1995), p. 303.Google Scholar

[6] Lipkin, L.A. and Palmour, J.W.: J. Electron. Mater. Vol. 24 (1996), p. 909.Google Scholar

[7] Afanas'ev, V.V., Bassler, M., Pensl, G., and Schulz, M.: Phys. Stat. Sol. (a) Vol. 162 (1997), p. 321.Google Scholar

[8] Das, M.K., Um, B.S., and Cooper, J.A. Jr., : Matl. Sci. Forum Vols 338–342 (1999) p. 1069.Google Scholar

[9] Saks, N.S., Mani, S.S., and Agarwal, A.K.: Appl. Phys. Lett. Vol. 76 (2000), p. 2250.Google Scholar

[10] Li, H., Dimitrijev, S., Harrison, H.B., and Sweatman, D., Appl. Phys. Lett. Vol. 70 (1997), p. 2028.Google Scholar

[11] Chung, G.Y., Tin, C.C., Williams, J.R., McDonald, K., Ventra, M. Di, Pantelides, S.T., Feldman, L.C., and Weller, R.A.: Appl. Phys. Lett. Vol. 76 (2000), p. 1713.Google Scholar

[12] Lipkin, L.A., Das, M.K., and Palmour, J.W.: Matl. Sci. Forum Vols. 389–393 (2002), p. 985.Google Scholar

[13] Ryu, Sei-Hyung, Agarwal, Anant K., Richmond, James T., and Palmour, John W. : MRS Proceedings, Volume 764, 2003, p.C2.7.1 Google Scholar

[14] http://www.advancedpower.com/Google Scholar

[15] http://www.infineon.com/cmc_upload/documents/085/066/SPP_A06N80C3.pdfGoogle Scholar

Crossref Citations

This article has been cited by the following publications. This list is generated based on data provided by Crossref.

Anant K. Agarwal, Ben Damsky 2005. The First Demonstration of the 1 cm x 1 cm SiC Thyristor Chip. p. 195.

Gupta, Aparna and Jacob, Chacko 2005. Selective epitaxy and lateral overgrowth of 3C-SiC on Si – A review. Progress in Crystal Growth and Characterization of Materials, Vol. 51, Issue. 1-3, p. 43.

Jonas, Charlotte Elizabeth Zhang, Qingchun Ryu, Sei-Hyung Agarwal, Anant and Palmour, John 2006. Fabrication and Characterization of 5 kV IGBTs on 4H-SiC. MRS Proceedings, Vol. 911, Issue. ,

Richmond, Jim Ryu, Sei Hyung Krishnaswami, Sumi Agarwal, Anant K. Palmour, John W. Geil, Bruce Katsis, Dimos and Scozzie, Charles 2006. 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200°C Baseplate Temperature. Materials Science Forum, Vol. 527-529, Issue. , p. 1445.

Agarwal, Anant K. Krishnaswami, Sumi Damsky, Ben Richmond, Jim Capell, Craig Palmour, John W. and Ryu, Sei Hyung 2006. A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules. Materials Science Forum, Vol. 527-529, Issue. , p. 1397.

Senzaki, Junji Shimozato, Atsushi Okamoto, Mitsuo Kojima, Kazutoshi Fukuda, Kenji Okumura, Hajime and Arai, Kazuo 2009. Evaluation of 4H-SiC Thermal Oxide Reliability Using Area-Scaling Method. Japanese Journal of Applied Physics, Vol. 48, Issue. 8, p. 081404.

Kimoto, Tsunenobu 2010. SiC technologies for future energy electronics. p. 9.

Senzaki, Junji Shimozato, Atsushi Koshikawa, Kazushige Tanaka, Yasunori Fukuda, Kenji and Okumura, Hajime 2011. Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer. Materials Science Forum, Vol. 679-680, Issue. , p. 378.

Niwa, Hiroki Feng, Gan Suda, Jun and Kimoto, Tsunenobu 2012. Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures. IEEE Transactions on Electron Devices, Vol. 59, Issue. 10, p. 2748.

Niwa, Hiroki Feng, Gan Suda, Jun and Kimoto, Tsunenobu 2012. Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes. Materials Science Forum, Vol. 717-720, Issue. , p. 973.

Nanjo, Takuma Imai, Akifumi Suzuki, Yosuke Abe, Yuji Oishi, Toshiyuki Suita, Muneyoshi Yagyu, Eiji and Tokuda, Yasunori 2013. AlGaN Channel HEMT With Extremely High Breakdown Voltage. IEEE Transactions on Electron Devices, Vol. 60, Issue. 3, p. 1046.

Kawahara, Chihiro Suda, Jun and Kimoto, Tsunenobu 2014. Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging. Japanese Journal of Applied Physics, Vol. 53, Issue. 2, p. 020304.

2014. Fundamentals of Silicon Carbide Technology. p. 1.

Niwa, Hiroki Suda, Jun and Kimoto, Tsunenobu 2015. Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices. IEEE Transactions on Electron Devices, Vol. 62, Issue. 10, p. 3326.

Niwa, Hiroki Suda, Jun and Kimoto, Tsunenobu 2017. Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation. IEEE Transactions on Electron Devices, Vol. 64, Issue. 3, p. 874.

Kimoto, T. and Yonezawa, Y. 2018. Current status and perspectives of ultrahigh-voltage SiC power devices. Materials Science in Semiconductor Processing, Vol. 78, Issue. , p. 43.

Na, Moonkyong Bahng, Wook Jang, Hyemin Kim, Jung Min and Jung, Hyundon 2021. Effects of stress on the evolution of Σ-shaped dislocation arrays in a 4H-SiC epitaxial layer. Journal of Applied Physics, Vol. 129, Issue. 24,

Xu, Binjie Han, Xuefeng Xu, Suocheng Yang, Deren and Pi, Xiaodong 2024. Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC. Crystal Research and Technology, Vol. 59, Issue. 7,

Speer, Kevin Sharma, Yogesh Maximenko, Sergey Di Giovanni, Filippo Bollina, Ravi Gemmill, William Knight, Terry Jentgens, Christian and Willers, Helge 2024. SiC Technology. p. 25.

Xu, Binjie Lu, Sheng'ou Cui, Hao Pi, Xiaodong Yang, Deren and Han, Xuefeng 2024. The fracture stress of 8-inch silicon carbide during the PVT growth. CrystEngComm, Vol. 26, Issue. 39, p. 5550.

Article contents

SiC Power Devices – An Overview

Abstract

Access options

References

REFERENCES

This article has been cited by the following publications. This list is generated based on data provided by Crossref.

Article contents

SiC Power Devices – An Overview

Abstract

Access options

References

REFERENCES

Save article to Kindle

Save article to Dropbox

Save article to Google Drive

Reply to: Submit a response

Your details

You have entered the maximum number of contributors

Conflicting interests