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Selective Area Epitaxy of GaAs Optical Waveguides by Laser Assisted Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

J.C. Roberts ,
K.S. Boutros  and
S.M. Bedair
J.C. Roberts
Affiliation:
Dept. of ECE, Campus Box 7911, North Carolina State University, Raleigh, NC 27695
K.S. Boutros
Affiliation:
Dept. of ECE, Campus Box 7911, North Carolina State University, Raleigh, NC 27695
S.M. Bedair
Affiliation:
Dept. of ECE, Campus Box 7911, North Carolina State University, Raleigh, NC 27695
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Abstract

Direct writing of GaAs optical waveguides has been achieved by laser assisted chemical vapor deposition (LCVD). The multimode waveguides have gaussian-like cross sections, smooth surfaces, and exhibit losses as low as 5.4 dB/cm. The LCVD technique offers the capability of maskless in situ selective epitaxial growth of diverse multilayer structures, and is therefore a novel alternative for the monolithic integration of optoelectronic integrated circuits.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 631
Copyright
Copyright © Materials Research Society 1996

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References

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