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Search for Vacancies in Laser Annealed Silicon

Published online by Cambridge University Press:  15 February 2011

H. J. Stein  and
P. S. Peercy
H. J. Stein
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico
P. S. Peercy
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico
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Abstract

In an effort to enhance vacancy trapping and detection in laser-annealed Si, float zone Si was implanted with oxygen to achieve concentrations between one and two orders of magnitude greater than the equilibrium saturation limit. Oxygen, which is known to be an effective trap for vacancies, was found to incorporate efficiently into Si regrown with Q-switched laser annealing Interstitial oxygen, oxygen-vacancy defects and divacancies were observed after implantation. The laser-regrown layers, however, were free of detectable vacancy-associated defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 229
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

This work performed at Sandia National Laboratories supported by the U.S. Department of Energy under contract number DE-AC04-76DP00789.

References

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