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Recessed and Epitaxially Regrown SiGe(B) Source/Drain Junctions with Ni salicide contacts

Published online by Cambridge University Press:  17 March 2011

Christian Isheden ,
Per-Erik Hellström ,
Henry H. Radamson  and
Mikael Östling
Christian Isheden
Affiliation:
KTH (Royal Institute of Technology), Department of Microelectronics and Information Technology, P.O. Box Electrum 229, SE-164 40 Kista, Sweden, isheden@imit.kth.se
Per-Erik Hellström
Affiliation:
KTH (Royal Institute of Technology), Department of Microelectronics and Information Technology, P.O. Box Electrum 229, SE-164 40 Kista, Sweden
Henry H. Radamson
Affiliation:
KTH (Royal Institute of Technology), Department of Microelectronics and Information Technology, P.O. Box Electrum 229, SE-164 40 Kista, Sweden
Mikael Östling
Affiliation:
KTH (Royal Institute of Technology), Department of Microelectronics and Information Technology, P.O. Box Electrum 229, SE-164 40 Kista, Sweden
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Abstract

Integration issues concerning recessed epitaxial SiGe(B) source/drain junctions formed by selective Si etching followed by selective epitaxial growth of in situ heavily B-doped Si1−xGex are presented. The concept is beneficial compared to conventional ion implanted junctions, since dopant activation above the solid solubility in Si can be obtained. When integrated in the PMOS process flow, the resulting Si1−xGex layer is very rough. Several possible causes for low quality epitaxy are discussed and improvements are proposed. It is suggested that the dopant type and/or concentration in the silicon substrate can have an effect on the process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C2.3
Copyright
Copyright © Materials Research Society 2004

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References

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