Skip to main content Accessibility help
×
Home
Hostname: page-component-cf9d5c678-5tm97 Total loading time: 0.167 Render date: 2021-07-28T15:10:47.324Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Recessed and Epitaxially Regrown SiGe(B) Source/Drain Junctions with Ni salicide contacts

Published online by Cambridge University Press:  17 March 2011

Christian Isheden
Affiliation:
KTH (Royal Institute of Technology), Department of Microelectronics and Information Technology, P.O. Box Electrum 229, SE-164 40 Kista, Sweden, isheden@imit.kth.se
Per-Erik Hellström
Affiliation:
KTH (Royal Institute of Technology), Department of Microelectronics and Information Technology, P.O. Box Electrum 229, SE-164 40 Kista, Sweden
Henry H. Radamson
Affiliation:
KTH (Royal Institute of Technology), Department of Microelectronics and Information Technology, P.O. Box Electrum 229, SE-164 40 Kista, Sweden
Mikael Östling
Affiliation:
KTH (Royal Institute of Technology), Department of Microelectronics and Information Technology, P.O. Box Electrum 229, SE-164 40 Kista, Sweden
Corresponding
E-mail address:
Get access

Abstract

Integration issues concerning recessed epitaxial SiGe(B) source/drain junctions formed by selective Si etching followed by selective epitaxial growth of in situ heavily B-doped Si1−xGex are presented. The concept is beneficial compared to conventional ion implanted junctions, since dopant activation above the solid solubility in Si can be obtained. When integrated in the PMOS process flow, the resulting Si1−xGex layer is very rough. Several possible causes for low quality epitaxy are discussed and improvements are proposed. It is suggested that the dopant type and/or concentration in the silicon substrate can have an effect on the process.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gannavaram, S., Pesovic, N. and Ötürk, M.C., IEDM Tech. Digest, 437 (2000).Google Scholar
2. Tillack, B., Zaumseil, P., Morgenstern, G., Krüger, D., Dietrich, B., Ritter, G., J. Crystal Growth 157, 181 (1995).CrossRefGoogle Scholar
3. Shinoda, H., Kosaka, M., Kojima, J., Ikeda, H., Zaima, S., Yasuda, Y., Appl. Surf. Sci. 100/101, 526 (1996).CrossRefGoogle Scholar
4. Isheden, C., Hellström, P.-E., Radamson, H. H., Zhang, S.-L. and Östling, M., Electrochem. Solid-State Lett. 7(4), G53 (2004).CrossRefGoogle Scholar
5. Loo, R., Caymax, M., Meunier-Beillard, P., Peytier, I., Holsteyns, F., Kubicek, S., Verheyen, P., Lindsay, R. and Richard, O., Appl. Surf. Sci. 224, 63 (2004).CrossRefGoogle Scholar
6. Norström, H., Blom, H.-O., Östling, M., Larsen, A. Nylandsted, Keikonen, J. and Berg, S., J. Vac. Sci. Technol. B9(1), 34 (1991).CrossRefGoogle Scholar
7. Norström, H., Kittlesen, G., Wiklund, P., Östling, M. and Niemi, E., Vacuum 38, 801 (1988).CrossRefGoogle Scholar
8. Isheden, C., Hellström, P.-E., Radamson, H.H., Zhang, S.-L. and Östling, M., presented at the 20th Nordic Semiconductor Meeting, August 2527 (2003), to be published in Physica Scripta.Google Scholar
9. Persson, S., Isheden, C., Jarmar, T. and Zhang, S.-L., submitted to IEEE Trans. Electr. Dev. (2004).Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Recessed and Epitaxially Regrown SiGe(B) Source/Drain Junctions with Ni salicide contacts
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Recessed and Epitaxially Regrown SiGe(B) Source/Drain Junctions with Ni salicide contacts
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Recessed and Epitaxially Regrown SiGe(B) Source/Drain Junctions with Ni salicide contacts
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *