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Pulsed Ion Beam Induced Crystallization and Amorphization of Silicon

Published online by Cambridge University Press:  26 February 2011

Jan Linnros ,
W. L. Brown  and
R. G. Elliman
Jan Linnros
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974 USA
W. L. Brown
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974 USA
R. G. Elliman
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974 USA
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Abstract

The ion-bombardment-induced movement of an amorphous/crystalline interface in silicon has been studied under pulsed beam conditions. Irradiations were performed with a 1.5 MeV Xe beam at temperatures of 200–300°C which induced a planar motion of the interface, either to epitaxially crystallize the amorphous material or to planar amorphize the crystalline material. It is found that at a fixed peak and average beam current the result of pulsed irradiation can vary from amorphization at low pulse repetition frequency to crystallization at high pulse repetition frequency. The frequency which characterizes this change in behavior is virtually temperature independent but strongly dependent on peak beam flux.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 369
Copyright
Copyright © Materials Research Society 1988

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References

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