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Properties of Electron Emitting Diode Fabricated with Single-Crystalline Diamond

Published online by Cambridge University Press:  10 February 2011

Toshimichi Ito  and
Masaki Nishimura
Toshimichi Ito
Affiliation:
Department of Electrical Engineering, Osaka University, Suita, Osaka 565-0871, Japan, ito@pwr.eng.osaka-u.ac.jp
Masaki Nishimura
Affiliation:
Department of Electrical Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Abstract

Highly efficient electron emitting diodes have been fabricated using single-crystalline diamond films epitaxially grown on high-pressure synthesized (100) diamond. These diodes have an internal electrode of a graphitized layer buried below an overgrown diamond layer with a very high resistivity, the structure of which is formed by a combination of heavy ionimplantation and overgrowth techniques. The efficiency of electron emissions from sufficiently hydrogenated p-type diamond surfaces reached 100% in the best case. It is found that H atoms can passivate internal defects created during the ion implantation process. The mechanism of the high efficiency is discussed in relation to electron-hole creations in the thin diamond layer under extremely high electric fields of 107 V/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 105
Copyright
Copyright © Materials Research Society 2000

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