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Propagation and Scattering of Exciton-Polaritons in Nitride-Based Multiple Quantum Wells

Published online by Cambridge University Press:  17 March 2011

Guillaume Malpuech ,
Marian Zamfirescu ,
Alexey Kavokin  and
Aldo Di Carlo
Guillaume Malpuech
Affiliation:
LASMEA, University Blaise Pascal, Aubiere, Cedex, FRANCE
Marian Zamfirescu
Affiliation:
LASMEA, University Blaise Pascal, Aubiere, Cedex, FRANCE
Alexey Kavokin
Affiliation:
LASMEA, University Blaise Pascal, Aubiere, Cedex, FRANCE
Aldo Di Carlo
Affiliation:
INFM-Dipartimento di Ingegneria Elettronica, Universita di Roma II, via Tor Vergata, Roma, ITALY
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Abstract

We show theoretically that disorder-induced scattering of light between « bright » and « dark » exciton-polariton modes governs the coherent optical response of GaN/AlGaN quantum wells (QWs) on a femtosecond scale. The incident light essentially excites the “bright” modes, they emit the most part of light radiatively during first few hundreds of femtoseconds. The rest of the coherent signal, i.e. the temporal behaviour on a scale from 1 to few picoseconds, comes from the “dark” modes, populated due to the elastic scattering processes in the system, and mixed so that they form two bulk-like polariton branches. The pico-second scale optical response of GaN/AlGaN QWs is essentially incoherent because of a very efficient scattering of exciton-polaritons by a structural disorder.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G9.9
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Grandjean, N., Massies, J. and Leroux, M., Appl. Phys. Lett. 74, 2361, (1999).Google Scholar
2. Gil, B., et al, Phys. Rev. B 59, 10246 (1999).Google Scholar
3. Bernardini, F., Fiorentini, V., and Vanderbilt, D., Phys. Rev. Lett. 79, 3958 (1997).Google Scholar
4. Sala, F. Della et al, Appl. Phys. Lett. 74, 2002 (1998).Google Scholar
5. Baumberg, J.J. et al, Phys. Rev. Lett. 80, 3567 (1998).Google Scholar
6. Kavokin, A.V. and Baumberg, J.J., Phys. Rev. B 57, R12 697 (1998).Google Scholar
7. Malpuech, G. and Kavokin, A., App. Phys. Lett. 76, 3049–3051 (2000).Google Scholar
8. Ivchenko, E.L. et al., Fiz. Tverd. Tela (St. Petersburg) 36, 2118 (1994) [Phys. Solid State 16, 17 (1994)]; Y. Merle d'Aubigne et al., Phys. Rev. B 54, 14 003 (1996).Google Scholar
9. Andreani, L.C. et al, Phys. Rev. B 57, 4670 (1998).Google Scholar
10. Kavokin, A.V. et al, Phys. Rev B 60, 15554 (1999).Google Scholar
11. Malpuech, G., Kavokin, A. and Panzarini, G., Phys. Rev B 60, 16788 (1999).Google Scholar
12 Lefebvre, P. et al, Phys. Rev. B 57, R9447 (1998).Google Scholar