Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-26T12:19:05.048Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoreflectance of a GaAs/In0.5 Ga0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy

Published online by Cambridge University Press:  28 February 2011

X. Yin ,
Fred H. Pollak ,
B.T. McDermott ,
K.G. Reid  and
S.M. Bedair
X. Yin
Affiliation:
Physics Department, Brooklyn College of CUNY, Brooklyn, NY 11210
Fred H. Pollak
Affiliation:
Physics Department, Brooklyn College of CUNY, Brooklyn, NY 11210
B.T. McDermott
Affiliation:
Electrical Engineering Department, North Carolina State University, Raleigh, NC 27695
K.G. Reid
Affiliation:
Electrical Engineering Department, North Carolina State University, Raleigh, NC 27695
S.M. Bedair
Affiliation:
Electrical Engineering Department, North Carolina State University, Raleigh, NC 27695
Get access

Abstract

We have studied the photoreflectance spectrum at 300K from a GaAs/In0.5 Ga0.5p (ordered) single quantum well fabricated by atomic layer epitaxy. Comparison of the energies of the observed intersubband and barrier transitions with an envelope function model calculation yields a valence band offset of 350 ± 20 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 679
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Kroemer, H., J. Vac. Sci. Technol. B1. 126 (1983).Google Scholar
2Mondry, M.J. and Kroemer, H.IEEE Electron Devices Lett. EDL–6, 175 (1985).Google Scholar
3Rao, M.A., Caine, E.J., Kroemer, H., Long, S.I. and Babio, D.I., J. Appl. Phys. 61, 643 (1987).Google Scholar
4Watanabe, M.O. and Ohba, Y., Appl. Phys. Lett. 50, 906 (1987).Google Scholar
5Hafich, M.J., Quigley, J.M., Owens, R.E. and Robinson, G.Y., Appl. Phys. Lett., Vol. 54, 2686 (1989).Google Scholar
6Razeghi, M., Maurel, Ph., Omnes, F., Defour, M., Boothroyd, C., Stobbs, W.M. and Kelley, M., J. Appl. Phys. 63, 4511 (1988).Google Scholar
7Kitahara, K., Hoshino, M. and Ozeki, M., Jpn. J. Appl. Phys. 27, L110 (1988).Google Scholar
8McDermott, B.T., El-Masry, N.A., Tischler, M.A. and Bedair, S.M., Appl. Phys. Letts. 51, 1830 (1987).Google Scholar
9Shen, H., Parayanthal, P., Liu, Y.F. and Pollak, F.H., Rev. Sci. Instrum. 58, 1429 (1987).Google Scholar
10 See, for example, Aspnes, D.F., in Handbook on Semiconductors, edited by Moss, T.S. (North-Holland, New York, 1980), Vol. 2, p.109 and references therein.Google Scholar
11 For unbound states such as band-to-band transitions PR produces a third-derivative lineshape while for bound states such as isolated quantum well transitions a first-derivative spectroscopy is appropriate. See, for example, Pollak, F.H. and Glembocki, O.J. in Proceedings of the Society of Photo-optical Instrumentation Engineers (SPIE, Bellingham, 1988) 946, 2 (1988).Google Scholar
12 See, for example, Glembocki, O.J. and Shanabrook, B.V.Superlattices and Microstructures 5, 603 (1989).Google Scholar
13Shen, H., Pan, S.H., Pollak, F.H. and Sacks, R.N., Phys. Rev. B36, 9384 (1989).Google Scholar
14McDermott, B.T., Reid, K.G., Dip, A. and Bedair, S.M., this conference.Google Scholar
15Bastard, G. and Brum, J.A., IEEE J. Quant. Electron. QE22, 1625 (1986).Google Scholar
16 The effective masses used were obtained by a linear interpolation between those of GaAs and InP. Values were taken from Landolt-Bornstein, Numerical Data and Functional Relationships in Science and Technology, ed. by Modelung, O., Schulz, M. and Weiss, H. (Springer, New York, 1972) Vol. III/17a.Google Scholar
17Joyce, B.T., Johnson, M.J., Gal, M. and Usher, B.F., Phys. Rev. B38, 10978 (1988).Google Scholar