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Organometallic Chemical Vapor Deposition of Group-III Nitride Thin Films using Single Source Precursors

Published online by Cambridge University Press:  10 February 2011

Roland A. Fischer  and
Wolfram Rogge
Roland A. Fischer
Affiliation:
Lehrstuhl für Anorganische Chemie II Ruhr Universität Bochum, D-44780 Bochum
Wolfram Rogge
Affiliation:
Lehrstuhl für Anorganische Chemie II Ruhr Universität Bochum, D-44780 Bochum
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Abstract

The OMCVD of AlN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2 (2) and (N3)Al(CH2)3NMe2]2 (3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200°C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 39
Copyright
Copyright © Materials Research Society 1998

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