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Optical Absorption of Doped and Undoped Bulk SiC

Published online by Cambridge University Press:  21 March 2011

K. Miller ,
Q. Zhou ,
J. Chen ,
M. O. Manasreh ,
Z. C. Feng  and
I. Ferguson
K. Miller
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87109.
Q. Zhou
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87109.
J. Chen
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87109.
M. O. Manasreh
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87109.
Z. C. Feng
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602.
I. Ferguson
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873.
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Abstract

Optical absorption spectra of undoped, n-type, and semi-insulating 6H and 4H bulk silicon carbide (SiC) were obtained in the spectral region of 200 – 3200 nm (6.20 – 0.3875 eV). Several features were observed in the absorption spectra collected for various samples. A sharp peak below the band gap was observed in 4H SiC. The intensity of this peak was observed to increase in samples that exhibit larger absorption due to free carriers, which leads us to conclude that the defect responsible for this peak is also the source of the free carriers in the materials. Additionally, a series of optical absorption peaks separated by approximately 21 meV were observed around 0.9185 eV (1350 nm). These peaks are zero phonon lines of intraband transitions in the VSi 3d shell. The optical absorption near the band edge was observed to be sample dependent. The variation of the band gap as a function of temperature is also observed to be sample dependent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.23
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCE

1. Sorman, E., Son, N.T., Chen, M., Kordina, O., Hallin, C., and Janzen, E., Phys. Rev. B 61, (2000).Google Scholar
2. Kuhne, H., Weiser, G., Terukov, E.I., Kusnetsov, A. N., and Kudoyarova, V. Kh., J. Appl. Phys. 86, 896 (1999).Google Scholar
3. Biedermann, E., Solid State Comm. 3, 343 (1965).Google Scholar
4. “Optical Processes in Semiconductors” Pankove, J. I. (Dover Publication, New York, 1971), Chap. 3, pp.34–36.Google Scholar
5. Jenny, J. R. and Skwronski, M., J. Appl. Phys. 78, (1995)Google Scholar
6. Schneider, J., Muller, H.D., Maier, K., Wilkening, W., and Fuchs, F., Appl. Phys. Lett. 56 (12), (1990).Google Scholar
7. Reinke, J., Weihrich, H., Greulich-Weber, S. and Spaeth, J. -M., Semicond. Sci. Technol., 8 (1993).Google Scholar
8. Vina, L., Logothetidis, S., and Cardona, M., Phys. Rev. B 30, 1979 (1984).Google Scholar
9. Passler, R., Phys. Stat. Sol (b) 200, 155 (1997).Google Scholar
10. Cody, G. D., in “Hydrogenated Amorphous Silicon”, edited by Pankove, J.I.,”Semiconductors and Semimetals”, Vol.21, Pt. B (academic, New York, 1984), Chap. 2, pp. 11–79.Google Scholar