Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-14T05:13:59.266Z Has data issue: false hasContentIssue false
  • English
  • Français

ODMR of Shallow Donors in Zn-Doped Lec-Grown InP

Published online by Cambridge University Press:  25 February 2011

J. M. Trombetta  and
T. A. Kennedy
J. M. Trombetta
Affiliation:
Naval Research Laboratory, Washington, DC 20375
T. A. Kennedy
Affiliation:
Naval Research Laboratory, Washington, DC 20375
Get access

Abstract

ODMR spectra observed while monitoring the shallow donor-shallow acceptor pair emission in Zn-doped LEC-grown InP display strong features in the region near the conduction electron value of g=1.20. In addition to a previously observed narrow line, we observe a much broader resonance which dominates at low photoexcitation intensity. This broader line is interpreted as the unresolved exchange split resonances of electrons bound to residual shallow donors. The exchange broadening arises from interactions with nearby paramagnetic centers. Both resonances result in a decrease in the shallow-donor-to-shallow-acceptor radiative recombination and give evidence for pair recombination processes which compete with this emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 33
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Cavenett, B. C., Adv. Phys. 30, 475 (1981).Google Scholar
2 Davies, J. J., J. Crys. Growth 72, 317 (1985).Google Scholar
3 Block, D., Hervé, A., and Cox, R. T., Phys. Rev. B 25, 6049 (1982).Google Scholar
4 Dunstan, D. J. and Davies, J. J., J. Phys. C 12, 2927 (1979).Google Scholar
5 Cox, R. T. and Davies, J. J., Phys. Rev. B 34, 8591 (1986).Google Scholar
6 Jeon, D. Y., Donegan, J. F., and Watkins, G. D., Phys. Rev. B 39, 3207 (1989).Google Scholar
7 Lawaetz, P., Phys. Rev. B 4, 3460 (1971).Google Scholar
8 Goltzené, A., Meyer, B., and Schwab, C., J. Appl. Phys. 62, 4406 (1987).Google Scholar
9 Clerjaud, B., Gendron, F., Obloh, H., Schneider, J., and Wilkening, W., Phys. Rev. B 40, 2042 (1989).Google Scholar
10 Gotschy, B., Denninger, G., Obloh, H., Wilkening, W., and Schneider, J., Sol. St. Commun. 71, 629 (1989).Google Scholar
11 Weisbuch, C. and Hermann, C., Sol. St. Commun. 16, 659 (1974).Google Scholar
12 Dawei, Yan, Cavenett, B. C., and Skolnick, M. S., J. Phys. C 16, L647 (1983).Google Scholar
13 Robins, L. H., Taylor, P. C., and Kennedy, T. A., Phys. Rev. B 38, 13227 (1988).Google Scholar
14 Dean, P. J., in Progress in Solid State Chemistry, Vol. 8, edited by McCaldin, J. O. and Somorjai, G. (Pergamon Press, New York, 1973), p. 1.Google Scholar
15 Glaser, E. R., Kennedy, T. A., Sillmon, R. S., and Spencer, M. G., Phys. Rev. B 40, 3447 (1989).Google Scholar
16 Temkin, H., Dim, B. V., Bonner, W. A., and Keramidas, V. G., J. Appl. Phys. 53, 7526 (1982).Google Scholar
17 Skolnick, M. S., Foulkes, E. J., and Tuck, B., J. Appl. Phys. 55, 2951 (1984).Google Scholar