Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-19T16:56:32.544Z Has data issue: false hasContentIssue false
  • English
  • Français

Novel Doping Process for Ultra-Shallow Junction: Rapid Vapor-Phase Direct Doping (RVD)

Published online by Cambridge University Press:  25 February 2011

Yukihiro Kiyota ,
Takahiro Onai ,
Tohru Nakamura ,
Taroh Inada ,
Atsushi Kuranouchi  and
Yasuaki Hirano
Yukihiro Kiyota
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, Japan
Takahiro Onai
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, Japan
Tohru Nakamura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, Japan
Taroh Inada
Affiliation:
College of Engineering, Hosei University, Koganei, Tokyo, Japan
Atsushi Kuranouchi
Affiliation:
College of Engineering, Hosei University, Koganei, Tokyo, Japan
Yasuaki Hirano
Affiliation:
College of Engineering, Hosei University, Koganei, Tokyo, Japan
Get access

Abstract

Characteristics are shown for shallow boron-doped layers formed by a new doping method called Rapid Vapor-phase direct Doping (RVD) which is suitable for making shallow junctions of less than 50 nm. In this method, boron atoms are doped into Si from the vaporphase after the native oxide is removed in hydrogen. From the results obtained for time dependence of doping characteristics, it was found that the surface boron concentration increases almost proportionally to the doping time. This result means that the surface boron concentration is determined by the amount of supplied boron atoms. It is a unique characteristic of this method and a reason why shallow junctions can be fonrned. This method was applied to the base region of a bipolar transistor and produced a normal DC characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 493
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Bousetta, A. et al: Appl.Phys Lett., 58, 1626 (1991).CrossRefGoogle Scholar
[2] Hong, S. N. et al: IEEE Trans. Electron. Devices, 38, 28 (1991).Google Scholar
[3] Yamazaki, T. et al: Tech. Digest of IEDM, 309 (1990).Google Scholar
[4] Patton, G. L. et al: Symp. on VLSI Tech., 49 (1990).Google Scholar
[5] Sato, F. et al: Tech. Digest of IEDM, 607 (1990).Google Scholar
[6] Nishizawa, J. et al: Appl. Phys. Lett., 56, 1334 (1990).Google Scholar
[7] Inada, T. et al: Appl. Phys. Lett., 58, 1748 (1991).Google Scholar
[8] Kiyota, Y. et al: submitted to IEEE Trans. Electron Devices.Google Scholar