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Molecular Beam Epitaxial Growth of Gaas on Silicon with Buried Implanted Oxides

Published online by Cambridge University Press:  28 February 2011

K. Das ,
T.P. Humphreys ,
J.B. Posthill ,
N. Parikh ,
J. Tarn ,
N. El-Masry ,
S.M. Bedair ,
W.K. Chu  and
J.J. Wortman
K. Das
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
T.P. Humphreys
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
J.B. Posthill
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
N. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514
J. Tarn
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
N. El-Masry
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
S.M. Bedair
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
W.K. Chu
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514
J.J. Wortman
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
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Abstract

We report the first results of direct growth of GaAs by molecular beam epitaxy on nominally (100) oriented silicon with buried implanted oxides. Rutherford backscattering and transmission electron microscopy techniques have been used to characterize these layers. The formation of hillocks and a uniform layer of GaAs in the intervening regions between hillocks have been observed. Microtwins, dislocations and antiphase domain boundaries are the predominant defects observed in these layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 513
Copyright
Copyright © Materials Research Society 1988

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