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Modeling of Dopant Defect Interactions

Published online by Cambridge University Press:  21 March 2011

C. Camarce ,
L. Radic ,
P. Keys ,
R. Brindos ,
K.S. Jones  and
M. E. Law
C. Camarce
Affiliation:
Department of Electrical and Computer EngineeringUniversity of Florida, Gainesville, FL 32611
L. Radic
Affiliation:
Department of Electrical and Computer EngineeringUniversity of Florida, Gainesville, FL 32611
P. Keys
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611
R. Brindos
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611
K.S. Jones
Affiliation:
Department of Materials Science and EngineeringUniversity of Florida, Gainesville, FL 32611
M. E. Law
Affiliation:
Department of Electrical and Computer EngineeringUniversity of Florida, Gainesville, FL 32611
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Abstract

This paper presents a model for {311} defects based on in-situ experiments. The model fits the 311 dependence on silicon implant energy and doses. The surface dependence of the model is described in detail, and compared to previous literature data. New data is presented on the surface effect on {311} dissolution and the model is compared to that data. In addition, the model is also used to explain the effects of doping on {311} defect behavior. Doping does not influence the dissolution of {311} defects, but only influences their nucleation behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J9.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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