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Microstructure and Electrical Characteristics of La1−xSrxMnO3 (0.19≤x≤0.31) Thin Films Prepared by Sputter Techniques

Published online by Cambridge University Press:  10 February 2011

H. Heo ,
S.J. Lim ,
G.Y. Sung  and
N.-H. Cho
H. Heo
Affiliation:
Department of Materials Science and Engineering, Inha University, Inchon, Korea 402-751. nhcho@dragon.inha.ac.kr
S.J. Lim
Affiliation:
Department of Materials Science and Engineering, Inha University, Inchon, Korea 402-751. nhcho@dragon.inha.ac.kr
G.Y. Sung
Affiliation:
Electronics and Telecommunications Research Institute, Daejeon, Korea 305-600
N.-H. Cho
Affiliation:
Department of Materials Science and Engineering, Inha University, Inchon, Korea 402-751. nhcho@dragon.inha.ac.kr
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Abstract

La1−x SrxMnO3(0.19≤x≤0.31) thin films were prepared on silicon wafers by sputter techniques. The effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystalline structure and electrical characteristics of the films was investigated. The films grown at a substrate temperature of 500°C were found to be of the pseudo-tetragonal system (0.97≤a/c≤1) and exhibited a strong tendency of {001} planes to lie parallel to substrate surface. With the increase of x, the electrical resistivity of the films decreased and the transition temperature between the metallic and semiconducting electrical transport behaviors shifted to high temperature. With a magnetic field of 0.18 Tesla, the maximum magneto-resistance ratio (MR%) of La0.69Sr0.31MnO3 polycrystalline thin films was about 390%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 602: Symposium JJ – Magnetoresistive Oxides & Related Materials , 1999 , 93
Copyright
Copyright © Materials Research Society 2000

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