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Lattice Location and Luminescence Behavior of Rare Earth Elements Implanted in GaN

Published online by Cambridge University Press:  10 February 2011

M. Dalmer ,
M. Restle ,
A. Stötzler ,
U. Vetter ,
H. Hofsäss ,
M. D. Bremser ,
C. Ronning ,
R. F. Davis  and
Isolde
M. Dalmer
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach M 621, D-78457 Konstanz, Germany
M. Restle
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach M 621, D-78457 Konstanz, Germany
A. Stötzler
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach M 621, D-78457 Konstanz, Germany
U. Vetter
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach M 621, D-78457 Konstanz, Germany
H. Hofsäss
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach M 621, D-78457 Konstanz, Germany
M. D. Bremser
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC, 27695, USA
C. Ronning
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC, 27695, USA
R. F. Davis
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7919, Raleigh, NC, 27695, USA
Isolde
Affiliation:
CERN / PPE, CH-1211 Geneva 23, Switzerland
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Abstract

Single crystalline GaN-layers were implanted with radioactive 167Tm and 169yb ions, and their lattice sites were determined using the emission channeling technique. After the decay of 167Tm to 167Er, photoluminescence studies were performed. Upon room temperature implantation, rare earth atoms immediately occupy relaxed substitutional sites with an average relaxation of about 0.025 nm. Isochronal annealing treatments up to 800 °C and co-implantation of oxygen to a dose an order of magnitude greater than that of the Tm or Yb do not influence the rare earth lattice sites. A variety of different rare earth related luminescence lines are observed, and co-implantation of oxygen strongly changes the line intensities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1021
Copyright
Copyright © Materials Research Society 1998

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