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Laser Selective Area Epitaxy for the Potential of Optoelectronic Integration

Published online by Cambridge University Press:  21 February 2011

H. Liu ,
J.C. Roberts ,
J. Ramdani  and
S.M. Bedair
H. Liu
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina
J.C. Roberts
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina
J. Ramdani
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina
S.M. Bedair
Affiliation:
Electrical and Computer Engineering Department, North Carolina State University, Raleigh, North Carolina
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Abstract

We report for the first time the dopant behavior in laser assisted selective epitaxy of device quality GaAs films. DMZn and H2Se were used as p-type and n-type dopants respectively. Uniform doping was achieved by introducing TMGa, AsH3 and dopant gases simultaneously and was accompanied by a decrease in growth rate for both Zn and Se doping. For planar doping, several Se planes were embedded in a GaAs layer by simultaneously introducing AsH3 and H2Se during the LCVD process. A sheet carrier concentration in the 1012 – 1013 cm−2 range was obtained for a single Se plane. Hall data of these films will be discussed. It was found planar doping results in better electrical properties and better growth rate control.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 377
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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