Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-18T07:38:37.783Z Has data issue: false hasContentIssue false
  • English
  • Français

Kinetics and Mechanisms of Solid Phase Epitaxy and Competitive Processes in Silicon

Published online by Cambridge University Press:  25 February 2011

G.L. Olson
G.L. Olson*
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu CA 90265
Get access

Abstract

Recent progress in studies of temperature dependent kinetic competition during solid phase crystallization of silicon is reviewed. Specific areas which are emphasized include: the enhancement of solid phase epitaxial growth rates by impurity-induced changes in electronic properties at the crystal/amorphous interface, the influence of impurity diffusion and precipitation in amorphous silicon on the kinetics of epitaxial growth, the effects of impurities on the kinetic competition between solid phase epitaxy and random crystallization, and the kinetics of solid phase crystallization at very high temperatures in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 25
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Olson, G.L., Kokorowski, S.A., Roth, J.A. and Hess, L.D., Mat. Res. Soc. Symp. Proc. 13, 141 (1983) and references therein; Olson, G.L., Roth, J.A., Hess, L.D. and , J. Narayan, ”Kinetics of Solid Phase Crystallization in Ion-Implanted and Amorphous Films#, in Layered Structures and Interface Kinetics: Their Technology and Applications (RTK Scientific Publishers, D. Reidel Publishing Co.) in press.Google Scholar
2. Csepregi, L., Kennedy, E.F., Gallagher, T.J., Mayer, J.W. and Sigmon, T.W, J. Appl. Phys. 48, 4234 (1977).Google Scholar
3. Suni, I., Göltz, G., Nicolet, M-A. and Lau, S.S., Thin Solid Films 93, 171 (1982).Google Scholar
4. Suni, I., Göltz, G., Grimaldi, M.G., Nicolet, M-A. and Lau, S.S., Appl. Phys. Lett. 40, 269 (1982).Google Scholar
5. Lietoila, A., Wakita, A., Sigmon, T.W. and Gibbons, J.F., J. Appl. Phys. 53, 4399 (1982).Google Scholar
6. Csepregi, L., Küllen, R.P., Mayer, J.W. and Sigmon, T.W., Sol. St. Commun. 21, 1019 (1977).Google Scholar
7. Van Vechten, J.A. and Thurmond, L.D., Phys. Rev. B 14, 3539 (1976).Google Scholar
8. Mosley, L.E. and Paesler, M.A., Appl. Phys. Lett. 45, 86 (1984).Google Scholar
9. Williams, J.S. and Elliman, R.G., Phys. Rev. Lett. 51, 1069 (1983).Google Scholar
10. Olson, G.L., Roth, J.A., Hess, L.D. and Narayan, J., Mat. Res. Soc. Symp. Proc. 23, 375 (1984).Google Scholar
11. Williams, J.S. and Elliman, R.G., Appl. Phys. Lett. 37, 829 (1980).Google Scholar
12. Narayan, J. and Holland, O.W., Phys. Stat. Solidi(a) 73, 225 (1982).Google Scholar
13. Suni, I., Shreter, U., Nicolet, M-A. and Baker, J.E., J. Appl. Phys. 56, 273 (1984).Google Scholar
14. Roth, J.A., Kokorowski, S.A., Olson, G.L. and Hess, L.D., Mat. Res. Soc. Symp. Proc. 4, 169 (1982); Roth, J.A., Olson, G.L. and Hess, L.D., Mat. Res. Soc. Symp. Proc. 23, 431 (1984).Google Scholar
15. Olson, G.L., Roth, J.A., Rytz-Froidevaux, Y. and Narayan, J., these Proceedings.Google Scholar
16. Christian, J.W., The Theory of Transformations in Metals and Alloys, (Pergamon Press, Oxford, 1965).Google Scholar
17. Hubler, G.K., Waddell, C.N., Spitzer, W.G., Fredrickson, J.E. and Kennedy, T.A., Mat. Res. Soc. Symp. Proc. 27, 217 (1984).Google Scholar
18. Kokorowski, S.A., Olson, G.L., Roth, J.A. and Hess, L.D., Phys. Rev. Lett. 48, 498 (1982); Mat. Res. Soc. Symp. Proc. 4, 195 (1982).Google Scholar
19. Cullis, A.G., these Proceedings, and references therein.Google Scholar
20. Peercy, P.S., these Proceedings, and references therein.Google Scholar
21. Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M. and Jacobson, D.C., Appl. Phys. Lett. 42, 698 (1983).Google Scholar
22. Turnbull, D., in Metastable Materials Formation by Ion Implantation, Picraux, S.T. and Choyke, W.J., Eds. (North-Holland, New York, 1982) p. 103.Google Scholar
23. For a review see Ref. [16], chapters 3 and 11.Google Scholar