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Ion Mixing and Demixing in The Au-Si System

Published online by Cambridge University Press:  15 February 2011

Bai-Xin Liu ,
Leszek S. Wieluński ,
Marc-A. Nicolet  and
S. S. Lau
Bai-Xin Liu
Affiliation:
California institute of Technology, Pasadena, California, USA
Leszek S. Wieluński
Affiliation:
California institute of Technology, Pasadena, California, USA
Marc-A. Nicolet
Affiliation:
California institute of Technology, Pasadena, California, USA
S. S. Lau
Affiliation:
University of California at San Diego, La Jolla, California, USA
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Abstract

After a relatively low dose Xe+ irradiation (∼ 2 × 1015 Xe/cm2), an initially discrete multilayered film of average composition Au7Si3 transforms to a uniform layer and forms a metastable phase. This is the well known ion mixing process. The same samples were subjected to higher dose irradiation (> 4 × 1015 Xe/cm2). It was found that the Si migrates to the sample surface and forms a nonuniform depth profile in BS spectra. At the same time, the metastable phase dissociates into Au and Si phases. As this process is opposite to that of ion mixing, we suggest to name this process ion demixing. These observations demonstrate that ion mixing and ion demixing can both occur in the same system, if it is properly chosen. Possible mechanism responsible for these processes are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 65
Copyright
Copyright © Materials Research Society 1982

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Footnotes

a)

Permanent Address: Qinghua University, Beijing, The People's Republic of China.

b)

Permanent Address: Institute of Nuclear Research, Warszawa, Hoza 69, Poland.

References

REFERENCES

1. See, for example, Mayer, J. W., Tsaur, B. Y., Lau, S. S., and Hung, L. S. in: Proceedings of the 2nd International Conference on Ion Beam Modification of Materials,Albany, New York(July 14–18, 1980),Google Scholar
Benenson, R.E., Kaufmann, E.N., Miller, G.L., and Scholz, W.W. eds. published in Nucl. Instr. & Meth. 182/183, 1–13 (1981).Google Scholar
2. See, for example, Marwick, A. D. in: Proceedings of the 2nd International Conference on Ion Beam Modification of Materials,Albany, New York(July 14–18, 1980)Google Scholar
Beneson, R.E., Kaufmann, E.N., Miller, G.L., and Scholz, W.W. eds. published in Nucl. Instr. & Meth. 182/183, 827 (1981).Google Scholar
3. See, for example, Tsaur, B. Y., Mayer, J. W., Nicolet, M-A., and Tu, K. N. in: Ion Implantation Metallurgy, Preece, C.M. and Hirvonen, J.K. eds. (Conference Proceedings, Cambridge, 1980), p. 142.Google Scholar
4.Liu, B. X., Wieluński, L. S., Mäenpää, M., Nicolet, M-A., and Lau, S. S., “Formation of Au-Si Metastable Phases by Ion Mixing”, an accompanying paper submitted to this Conference (Abstract E5.23).Google Scholar
5.Piller, R. C. and Marwick, A. D., J. Nucl. Mat. 71, 309 (1978).Google Scholar
6.Hiraki, A., Lugujjo, E., and Mayer, J. W., J. Appl. Phys. 43, 3643 (1972).Google Scholar