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Incubation Time Free CVD-TiO2 Film Preparation Using Novel Precursor of Ti-DOT

Published online by Cambridge University Press:  23 March 2011

Hirokazu Chiba
Affiliation:
TOSOH Corporation, Hayakawa 2743-1, Ayase, Kanagawa, 252-1123, Japan
Ken-ichi Tada
Affiliation:
Sagami Chemical Research Institute, Hayakawa 2743-1, Ayase, Kanagawa, 252-1193, Japan
Toshiki Yamamoto
Affiliation:
TOSOH Corporation, Hayakawa 2743-1, Ayase, Kanagawa, 252-1123, Japan Sagami Chemical Research Institute, Hayakawa 2743-1, Ayase, Kanagawa, 252-1193, Japan
Kohei Iwanaga
Affiliation:
TOSOH Corporation, Hayakawa 2743-1, Ayase, Kanagawa, 252-1123, Japan Sagami Chemical Research Institute, Hayakawa 2743-1, Ayase, Kanagawa, 252-1193, Japan
Atsushi Maniwa
Affiliation:
TOSOH Corporation, Hayakawa 2743-1, Ayase, Kanagawa, 252-1123, Japan
Tadahiro Yotsuya
Affiliation:
TOSOH Corporation, Hayakawa 2743-1, Ayase, Kanagawa, 252-1123, Japan Sagami Chemical Research Institute, Hayakawa 2743-1, Ayase, Kanagawa, 252-1193, Japan
Noriaki Oshima
Affiliation:
TOSOH Corporation, Hayakawa 2743-1, Ayase, Kanagawa, 252-1123, Japan Sagami Chemical Research Institute, Hayakawa 2743-1, Ayase, Kanagawa, 252-1193, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa, 226-8502, Japan
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Abstract

Titanium oxide thin films were deposited at 250 – 400 °C on amorphous SiO2 prepared on n-type Si substrates by chemical vapor deposition (CVD) using a novel precursor, ethene-1,2-diylbis(tert-butylaminido)diisopropoxotitanium [Ti[N(tBu)C=CN(tBu)](OiPr)2 , Ti-DOT], with oxygen gas as an oxidant. Deposition characteristics of thin films were compared with those using titanium tetraisopropoxide [Ti(OiPr)4, TTIP]. As a result, the deposition amount of TiO2 thin films using Ti-DOT was larger than that of TTIP because of the shorter incubation time in the case of Ti-DOT. Smaller surface roughness was observed for the films using Ti-DOT. In addition, a good conformability was obtained on amorphous SiO2 hole prepared on n-type Si substrate substrate with aspect ratio of 5.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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