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In situ Structural Study of Organic Semiconductor Thin Films

Published online by Cambridge University Press:  14 February 2012

Takuya Hosokai ,
Takeshi Watanabe ,
Tomoyuki Koganezawa ,
Jorg Ackermann ,
Hugues Brisset ,
Christine Videlot-Ackermann  and
Noriyuki Yoshimoto
Takuya Hosokai
Affiliation:
Department of Materials Science and Technology, Iwate University, 4-3-5 Ueda, Morioka, 0208551 Iwate, JAPAN
Takeshi Watanabe
Affiliation:
Department of Materials Science and Technology, Iwate University, 4-3-5 Ueda, Morioka, 0208551 Iwate, JAPAN
Tomoyuki Koganezawa
Affiliation:
Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-cho, 6795198 Hyogo, JAPAN
Jorg Ackermann
Affiliation:
Ingénierie Moléculaire et Matériaux Fonctionnels, Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), CNRS-UPR-3118, Aix Marseille Université, Campus Luminy, Case 913, 13288 Marseille Cedex 09, FRANCE
Hugues Brisset
Affiliation:
Ingénierie Moléculaire et Matériaux Fonctionnels, Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), CNRS-UPR-3118, Aix Marseille Université, Campus Luminy, Case 913, 13288 Marseille Cedex 09, FRANCE
Christine Videlot-Ackermann
Affiliation:
Ingénierie Moléculaire et Matériaux Fonctionnels, Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), CNRS-UPR-3118, Aix Marseille Université, Campus Luminy, Case 913, 13288 Marseille Cedex 09, FRANCE
Noriyuki Yoshimoto
Affiliation:
Department of Materials Science and Technology, Iwate University, 4-3-5 Ueda, Morioka, 0208551 Iwate, JAPAN
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Abstract

A new class of high-vacuum organic deposition chamber was developed to study the structure and growth of organic semiconductor thin films. Using the chamber in situ real-time 2-dimensional grazing incidence x-ray diffraction (2D-GIXD) was measured during thin film growth of distyryl-oligothiophenes derivatives (DS2T) on SiO2 surface. An evolution of 2D-GIXD pattern was clearly observed during the growth due to the crystallization of the molecular domains consisting of standing-up orientation. A theoretical simulation on the experimental 2D-GIXD map provided a potential use of this system to determine the unit cell parameters in thin films. Thickness dependence and influence of air exposure on the film structure were also studied.

Keywords

x-ray diffraction (XRD)thin filmorganic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1402: Symposium U – Charge Generation/Transport in Organic Semiconductor Materials , 2012 , mrsf11-1402-u08-33
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Schreiber, F., Phys. Stat. Sol. 201, 1037 (2004).Google Scholar
2. Ruiz, R., Choudhary, D., Nickel, B., Toccoli, T., Chang, K.-C., Mayer, A. C., Clancy, P., Blakely, J. M., Headrick, R. L., Iannotta, S., Malliaras, G. G., Chem. Mater., 14, 4497 (2004).Google Scholar
3. Schiefer, S., Huth, M., Dobrinevski, A., Nickel, B., J. Am. Chem. Soc., 129, 10316 (2007).Google Scholar
4. Yoshimoto, N., Aosawa, K., Tanisawa, T., Omote, K., Ackermann, J., Videlot-Ackermann, C., Brisset, H., Fages, F., Cryst. Res. Technol. 42, 1228 (2007).Google Scholar
5. Ito, M., Li, W. Y., Yoshimoto, N., Muraoka, H., Ogawa, S., Fujishiro, H., Asabe, Y., Ackermann, J., Videlot-Ackermann, C., Brisset, H., Fages, F., Mol. Cryst. Liq. Cryst., 491, 264 (2008).Google Scholar
6. Yasufuku, H., Ibe, T., Okumura, M., Kera, S., Okudaira, K. K., Harada, Y., Ueno, N., J. Appl. Phys., 90, 213 (2001).Google Scholar
7. Kowarik, S., Gerlach, A., Sellner, S., Cavalcanti, L., Schreiber, F., Adv. Eng. Mater., 11. 291 (2009).Google Scholar
8. Videlot-Ackermann, C., Ackermann, J., Kawamura, K., Yoshimoto, N., Brisset, H., Raynal, P., El Kassmi, A., Fages, F., Org. Electronics, 7, 465 (2006).Google Scholar