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Highly Conductive Microcrystalline Silicon Layers for Tunnel Junctions in Stacked Amorphous Silicon based Solar Cells.

Published online by Cambridge University Press:  21 February 2011

K. Prasad ,
U. Kroll ,
F. Finger ,
A. Shah ,
J-L. Dorter ,
A. Howling ,
J. Baumann  and
M. Schubert
K. Prasad
Affiliation:
Institut de Microtechnique, Université de Neuchatel, CH-2000 Neuchatel, Switzerland
U. Kroll
Affiliation:
Institut de Microtechnique, Université de Neuchatel, CH-2000 Neuchatel, Switzerland
F. Finger
Affiliation:
Institut de Microtechnique, Université de Neuchatel, CH-2000 Neuchatel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchatel, CH-2000 Neuchatel, Switzerland
J-L. Dorter
Affiliation:
CRPP, Ecole Poly technique Federale, CH-1007 Lausannne, Switzerland
A. Howling
Affiliation:
CRPP, Ecole Poly technique Federale, CH-1007 Lausannne, Switzerland
J. Baumann
Affiliation:
Fachbereich Physik, Universität Konstanz, D-7750 Konstanz, F. R. Germany
M. Schubert
Affiliation:
Inst. fur Physikalisch Elektronik, Universität Stuttgart, 7000 Stuttgart 80, F. R. Germany
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Abstract

We have investigated the influence of substrate temperature on the optoelectronic and structural properties of heavily doped μc-Si:H, prepared with the Very High Frequency Glow Discharge process. At substrate temperatures as low as 160°C we obtain, for films with 0.5μm thickness, maximum conductivities of 100 S/cm and 20 S/cm for <n> and <p> material, respectively. Starting from these values the deposition parameters were optimised for ultrathin layers having thicknesses in the range of 100 to 500Å. We observe that boron doping plays a critical role in the crystallisation of ultrathin films. The thinnest layers investigated so far show conductivities of 0.2 S/cm at d=100Å for <n>, and 0.2 S/cm at d=250Å for <p> material. These properties make μc-Si:H films attractive candidates to form tunnel junctions in tandem solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 469
Copyright
Copyright © Materials Research Society 1991

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References

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