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High Performance Organic Field Effect Transistor Withanovel Top-And-Bottom Contact (TBC) Structure

Published online by Cambridge University Press:  11 February 2011

Manabu Yoshida ,
Sei Uemura ,
Satoshi Hoshino ,
Takehito Kodzasa ,
Satoshi Haraichi  and
Toshihide Kamata
Manabu Yoshida
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1–1–1 Higashi, Tsukuba, Ibaraki 305–8565, JAPAN
Sei Uemura
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1–1–1 Higashi, Tsukuba, Ibaraki 305–8565, JAPAN
Satoshi Hoshino
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1–1–1 Higashi, Tsukuba, Ibaraki 305–8565, JAPAN
Takehito Kodzasa
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1–1–1 Higashi, Tsukuba, Ibaraki 305–8565, JAPAN
Satoshi Haraichi
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1–1–1 Higashi, Tsukuba, Ibaraki 305–8565, JAPAN
Toshihide Kamata
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1–1–1 Higashi, Tsukuba, Ibaraki 305–8565, JAPAN
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Abstract

We studied the features of the newly developed Top and Bottom Contact Field Effect Transistor (TBCFET) with organic semiconductor layers. TBCFETs with ca.0.5μm channel length (L) were fabricated and their transistor properties were measured. The output drain-source currents (IDS) of TBCFET were 1 to 2 orders of magnitude higher than those of ordinary planar type FETs with 100μm channel length. On the other hand, because of the TBC structure, off current tends to become larger in the TBCFET. Therefore, in order to solve this off-current problem, we intentionally formed the Schottky junction at the top electrode/semiconductor interface. As a result, the off current became about 2 orders of magnitude smaller than before the formation of the Schottky junction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 736: Symposium D – Electronics on Unconventional Substrates–Electrotextiles and Giant-Area Flexible Circuits , 2002 , D7.7
Copyright
Copyright © Materials Research Society 2003

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References

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