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Growth of YSZ and Y2O3 Films on SI(100) by Solid State Epitaxy

Published online by Cambridge University Press:  26 February 2011

J. Wecker ,
TH. Matthee ,
H. Behner ,
G. Friedl  and
K. Samwer
J. Wecker
Affiliation:
Siemens AG, Research Laboratory, D-8520 Erlangen, Germany
TH. Matthee
Affiliation:
Siemens AG, Research Laboratory, D-8520 Erlangen, Germany University of Augsburg, Institute of Physics, D-8200 Augsburg, Germany
H. Behner
Affiliation:
Siemens AG, Research Laboratory, D-8520 Erlangen, Germany
G. Friedl
Affiliation:
Siemens AG, Research Laboratory, D-8520 Erlangen, Germany University of Augsburg, Institute of Physics, D-8200 Augsburg, Germany
K. Samwer
Affiliation:
University of Augsburg, Institute of Physics, D-8200 Augsburg, Germany
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Abstract

Single crystalline YSZ and Y2O3 thin films are grown on Si(100) by e-beam evaporation. The amorphous S1O2 surface layer is removed in-situ by initially growing at low oxygen partial pressures in the case of YSZ or by first evaporating metallic Y for the growth of Y2O3. Epitaxy occurs by a solid state reaction after the SiO2 has been reduced by metallic Zr or Y. For Si/YSZ/Y2O3 the growth is cube on cube while in the case of Si/Y2O3/YSZ the oxide layers grow twinned in (110) orientation. XPS analysis and AES depth profiles reveal the reoxidation of the Si during further growth. Critical temperatures of 90 K and high current densities of 3.2×106 A/cm2 are measured on 150 nm thick YBCO films on SOS/YSZ/Y2O3 proving the excellent quality of the YBCO and the underlying buffer layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 275: Symposium S – Layered Superconductors: Fabrication, Properties and Applications , 1992 , 107
Copyright
Copyright © Materials Research Society 1992

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References

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