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Giant Magnetoresistance Induced by Ultrathin Magnetic Layers
Published online by Cambridge University Press: 10 February 2011
Abstract
We introduce an interface selective structure, composed of a spin-valve on top of which a thick nonmagnetic back layer is deposited as a straightforward experimental tool to measure the GMR induced by ultrathin magnetic layers. The interface selectivity of spin-dependent scattering is evidenced by calculations and illustrated in both Co/Cu/Co and Ni80Fe20/Cu/Ni80Fe20 spin-valves by an almost discontinuous behavior in the GMR ratio. The temperture dependence of the extremely short length scale associated with this discontinuity is discussed in relation to the structure of ultrathin ferromagnetic layers.
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- Copyright © Materials Research Society 1997
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