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GaNxAs1-x Growth by Molecular Beam Epitaxy with Dispersive Nitrogen

Published online by Cambridge University Press:  21 March 2011

S.Z. Wang ,
S.F. Yoon ,
T.K. Ng ,
W.K. Loke  and
W.J. Fan
S.Z. Wang
Affiliation:
School of Electrical and Electronic Engineering, Microelectronics Center, Block S1, S1-B2c-20, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore Singapore-Massachusetts Institute of Technology(MIT) Alliance, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore E-mail: szwang@ntu.edu.sg; esfyoon@ntu.edu.sg
S.F. Yoon
Affiliation:
School of Electrical and Electronic Engineering, Microelectronics Center, Block S1, S1-B2c-20, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
T.K. Ng
Affiliation:
School of Electrical and Electronic Engineering, Microelectronics Center, Block S1, S1-B2c-20, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
W.K. Loke
Affiliation:
School of Electrical and Electronic Engineering, Microelectronics Center, Block S1, S1-B2c-20, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
W.J. Fan
Affiliation:
School of Electrical and Electronic Engineering, Microelectronics Center, Block S1, S1-B2c-20, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
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Abstract

The effect of energetic nitrogen ion bombardment during growth may have a deleterious effect on the material quality. To avoid the bombardment effect of energetic nitrogen ions, a modified mode for GaAsN growth using dispersive nitrogen is reported. High quality GaAsN epilayers and good GaAsN/GaAs interface were achieved using this growth mode. The results suggest that the surface of samples grown using dispersive nitrogen has fewer defects than those grown using direct nitrogen beam. The optical property of GaAsN samples grown using the dispersive nitrogen technique was found to improve, due to the lower ion bombardment effect. This growth technique is expected to be advantageous for growing high quality GaAsN materials for optoelectronic applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.1.1
Copyright
Copyright © Materials Research Society 2002

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