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Friction Measurement in MEMS Using a New Test Structure

Published online by Cambridge University Press:  10 February 2011

B.T. Crozier
Affiliation:
Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164
M.P. de Boer
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87111
J.M. Redmond
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87111
D.F. Bahr
Affiliation:
Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164
T.A. Michalske
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87111
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Abstract

A MEMS test structure capable of measuring friction between polysilicon surfaces under a variety of test conditions has been refined from previous designs. The device is applied here to measuring friction coefficients of polysilicon surfaces under different environmental, loading, and surface conditions. Two methods for qualitatively comparing friction coefficients (µ) using the device are presented. Samples that have been coated with a self-assembled monolayer of the lubricating film perfluorinated-decyltrichlorosilane (PFTS) have a coefficient of friction that is approximately one-half that of samples dried using super-critical CO2 (SCCO2) drying. Qualitative results indicate that µ is independent of normal pressure. Wear is shown to increase µ for both supercritically dried samples and PFTS coated samples, though the mechanisms appear to be different. Super critically dried surfaces appear to degrade continuously with increased wear cycles, while PFTS coated samples reach a steady state friction value after about 105 cycles.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

1. deBoer, M.P, Knapp, J.A., Mayer, T.M., Michalske, T.A.. Proc. SPIE/EOS Conf. On Microsystems Metrology and Inspection, Munich, June 15, 1999.Google Scholar
2. Mastrangelo, C.H. and Hsu, C.H.. Proc. IEEE Solid-State Sensor & Actuator Workshop, Hilton Head, SC, USA, pp. 208. 1992.10.1109/SOLSEN.1992.228291Google Scholar
3. Israelachvili, J.N. et al. J. Adhesion Sci. Technol., 8:11, pp. 12311249. 1994.Google Scholar
4. deBoer, M.P, Redmond, J.M., Michalske, T.A.. SPIE Proc. 3512. Santa Clara, CA. Sept. 1998.Google Scholar
5. Srinivasan, U. et al. IEEE Hilton Head '98, Hilton Head Island, SC, USA, 1998. pp.156161.Google Scholar
6. Miller, S.L., Sniegowski, J.J., LaVigne, G., and McWhorter, P.J.. Proc. SPIE Smart Electronics and MEMS, 2722, pp. 197204. 1996.Google Scholar
7. Mehregany, M. and Senturia, S.D.. IEEE Trans. On Electron Devices, 39:5. 1992.Google Scholar
8. Deng, K. et al. J. Electrochem. Soc., 142:4. April 1995.Google Scholar
9. Tanner, D.M., Walraven, J.A., Irwin, L. W. et al. IEEE Int. Reliability Phys. Symp. March 21-25 1999. pp. 189197 Google Scholar
10. Lim, M.G. et al. Proc. IEEE MEMS Workshop, Napa Valley, CA, USA, Feb. 1990, pp. 8288.Google Scholar
11. Carpick, R.W., Salmeron, M.. Chem. Rev. 97:4, pp. 11631194. 1997.Google Scholar
12. Sniegowski, J.J. and Rodgers, M.S.. Tech.Dig. IEEE Int. Electron Devices Meeting, IEDM, Washington, D.C. Dec. 7-10, 1997, pp. 903906.Google Scholar
13. Dyck, C.W., Smith, J.H., Miller, S.L., Russick, E.M, Adkins, C.L.J.. SPIE Micromachining and Microfabrication, October 1996.Google Scholar
14. Hung, E.S., and Senturia, S.D., IEEE Hilton Head '98, Hilton Head Island, SC, USA, June 1998, pp. 8386.Google Scholar
15. Crozier, B.T., to be publishedGoogle Scholar