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Formation of Buried Nitride Layers in (110) Silicon
Published online by Cambridge University Press: 28 February 2011
High fluence ion implantation of N (1x1018/cm2 at 150 keV) has been used to form buried nitride layers in (110) silicon. After annealing at 1200 C for 5 hrs. a continuous, polycrystalline alpha-Si,N- layer (200 nm thick) is observed beneath a surface silicon film 306 nm thick. The upper Si/Si3N4 interface appears to be more abrupt than that observed in (100) silicon with minimal dendritic intergrowth and no evidence for microtwinning in the silicon. Furthermore, a band of nitride precipitates can be detected 500 nm below the continuous nitride layer. These nitride precipitates grow semi-coherently within the silicon with no observable strain or misfit dislocations within the silicon. The nitride precipitates are internally faulted to accomodate the 10% lattice mismatch in the (0001) nitride direction. Short term anneals reveal that the precipitates have fully crystallized within 10 min. at 1200 C while the continuous nitride layer is still amorphous.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 461
- Copyright © Materials Research Society 1988