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Formation of Buried Nitride Layers in (110) Silicon

Published online by Cambridge University Press:  28 February 2011

Abhaya K. Datye
Dept of Chemical and Nuclear Engineering
Vidya S. Kaushik
Dept of Chemical and Nuclear Engineering
Don L. Kendall
Dept. of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131.
Bernardo Martinez-Tovar
Dept. of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131.
David R. Myers
Sandia National Laboratories, Albuquerque, NM 87185.
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High fluence ion implantation of N (1x1018/cm2 at 150 keV) has been used to form buried nitride layers in (110) silicon. After annealing at 1200 C for 5 hrs. a continuous, polycrystalline alpha-Si,N- layer (200 nm thick) is observed beneath a surface silicon film 306 nm thick. The upper Si/Si3N4 interface appears to be more abrupt than that observed in (100) silicon with minimal dendritic intergrowth and no evidence for microtwinning in the silicon. Furthermore, a band of nitride precipitates can be detected 500 nm below the continuous nitride layer. These nitride precipitates grow semi-coherently within the silicon with no observable strain or misfit dislocations within the silicon. The nitride precipitates are internally faulted to accomodate the 10% lattice mismatch in the (0001) nitride direction. Short term anneals reveal that the precipitates have fully crystallized within 10 min. at 1200 C while the continuous nitride layer is still amorphous.

Research Article
Copyright © Materials Research Society 1988

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