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Electrical Characterization of Al-AlN(PSMBE Grown)-Si MIS Structures

Published online by Cambridge University Press:  10 February 2011

Regina Y Krupitskaya ,
Gregory W Auner  and
Tom E Daley
Regina Y Krupitskaya
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI.
Gregory W Auner
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI.
Tom E Daley
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI.
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Abstract

AIN films were grown by plasma source Molecular Beam Epitaxy (PSMBE) on n-type Si(111) substrates under various growth parameters. I-V and C-V-f dependencies of AI-AIN-Si(111) MIS structures were measured. Electrical characterization of MIS structures with PSMBE grown textured AIN thin films as insulator shows that low current leakage can be achieved, although some samples have rectifying I-V dependencies. C-V-f characteristics reveal evidence of the presence of different types of traps. Additional investigations are needed in order to determine the nature of these traps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 603
Copyright
Copyright © Materials Research Society 1997

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References

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