Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-08T22:36:53.046Z Has data issue: false hasContentIssue false
  • English
  • Français

Electric Field Induced Carbon Nanostructures for Electronics and High Surface Areaapplications

Published online by Cambridge University Press:  15 February 2011

Chao Hsun Lin ,
Shu Hsing Lee ,
Chih Ming Hsu ,
Ming Her Tsai  and
Cheng Tzu Kuo
Chao Hsun Lin
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan Photoetching Lab., Materials Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
Shu Hsing Lee
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan Photoetching Lab., Materials Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
Chih Ming Hsu
Affiliation:
Photoetching Lab., Materials Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
Ming Her Tsai
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
Cheng Tzu Kuo
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
Get access

Abstract

Strong influence of the applied or self-induced (i.e. self-biasing) electric field on the alignment, orientation and structures was found in the carbon nano-structure deposition process. This study applied microwave-plasma electron-cyclotron-resonance CVD (ECR-CVD) technique for carbon nano-structure deposition. The deposited structures and properties were characterized with SEM and field emission I–V measurements. The result shows that a negative dc bias applied on the substrate is a necessary condition. In this condition, all carbon nanostructures were well aligned and perpendicular to the substrate surfaces and independent to the plasma/gas flowing directions. Interestingly, when applied an additional electric field near the substrate surface by a guiding metal plate, the CNT growth direction could be manipulated from perpendicular to nearly parallel to the substrate surface. Moreover, a rattan-like CNT would form when prolonging the deposition time or increasing the plasma carbon concentration. These novel nanostructures are expected to have high potential in energy storage, field emission display, nanoelectronics and gas sensing applications accordingly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 776: Symposium Q – Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing , 2003 , Q11.11
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Iijima, S., Nature 354, 56 (1991).Google Scholar
2. Collins, P. G., Zettl, A., Bando, H., Thess, A. and Smalley, R. E., Science, 278 (1997) 100 Google Scholar
3. Junga, J.E., Jina, Y.W., Choia, J.H., Parka, Y.J., Kob, T.Y., Chunga, D.S., Kima, J.W., Janga, J.E., Chaa, S.N., Yia, W.K., Chob, S.H.,Yoonb, M.J., Leeb, C.G., Youb, J.H., Leee, N.S., Yooc, J.B. and Kima, J.M., Physica B 323, 71 (2002)Google Scholar
4. Zuttela, A., Sudana, P., Maurona, Ph., Kiyobayashib, T., Emmeneggera, Ch. and Schlapbacha, L., Int. J. of Hydrogen Energy 27, 203 (2002)Google Scholar
5. Dai, H., Hafner, J. H., Rinzler, A. G., Rinzler, D. T., Colbert, D. T. and Smalley, R. E., Nature 384, 147 (1996)Google Scholar
6. Collins, P. G. and Avouris, P., Scientific American ???, 62 (2000)Google Scholar
7. Kim, J. M., Chang, S. M., Suda, Y., Muramatsu, H., Sensors and Actuators A72, 140 (1999)Google Scholar
8. Thess, A., Lee, R., Nikolaev, P., Dai, H., Petit, P., Robert, J., Xu, C., Lee, Y. H., Kim, S. G., Rinzler, A. G., Colbert, D. T., Scuseria, G., Tomanek, D., Fisher, J. E. and Smalley, R. E., Science 273, 483 (1996)Google Scholar
9. Wei, Y. Y., Eres, G., Merkulov, V. I. and Lowndes, D. H., Appl. Phys. Lett. 78, 1394 (2001)Google Scholar
10. Chang, H. L., Lin, C. H. and Kuo, C. T., Diam. and Relat. Mater. 11 (3-6), 793 (2002)Google Scholar
11. Lin, C.H., Chang, H. L., Tsai, M. H. and Kuo, C. T., Diam. and Relat.Mater. 11 (3-6), 922 (2002)Google Scholar
12. Bernholc, J., Brabec, C., Nardelli, M. B., Maiti, A., Roland, C. and Yakobson, B.I., Appl. Phys. A 67, 39 (1998)Google Scholar
13. Li, W., Xie, S., Liu, W., Zhao, R., Zhang, Y.,Zhou, W., Wang, G. and Qian, L., J. Mater. Sci. 34, 2745 (1999)Google Scholar
14. Charlier, J. Ch., Blase, X., Vita, A. De and Car, R., Appl. Phys. A 68, 267 (1999)Google Scholar
15. Lee, C. J. and Park, J., Appl. Phys. Lett. 77, 3397 (2000)Google Scholar
16. Scott, C.D., Arepalli, S., Nikolaev, P. and Smalley, R.E., Appl. Phys. A 72, 573 (2001)Google Scholar
17. Smith, D. L., Thin-Film Deposition Principles and Practice, McGraw Hill, Taipei, Int. Edn. 1999, p. 508 Google Scholar
18. Kuo, C. T., Lin, C. H. andLo, A.Y., Diam. and Relat.Mater. (in press).Google Scholar
19. Hsu, C. M., Lin, C. H., Chang, H. L., Kuo, C. T., Thin Solid Films 420-421, 225 (2002)Google Scholar