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Effects of Electron Beam Irradiation on PZT/PLZT Thin Film Capacitors

Published online by Cambridge University Press:  15 February 2011

Bo Jiang ,
Jiyoung Kim ,
Rajesh Khamankar ,
Insup Lee  and
Jack C. Lee
Bo Jiang
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas 78712
Jiyoung Kim
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas 78712
Rajesh Khamankar
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas 78712
Insup Lee
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas 78712
Jack C. Lee
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas 78712
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Abstract

The effects of electron beam irradiation on the electrical characteristics of Pt-PZT-Pt and Pt-PLZT-Pt (with La concentration of 5% and 10%) thin film capacitors were studied. The top electrode of each capacitor was bombarded by localized energetic electrons with incident energies varying from 5 keV to 25 ke.V. Large distortions in the hysteresis loops were observed when the incident electrons had enough energy to penetrate the 1000Å Pt top electrode. The damage effects are strongly dependent on the original domain orientation when the film is irradiated, and an applied a.c. field after the irradiation seems to induce some recovery effects. The damage mechanism is explained by a simple model which considers the effect of space charge fields generated by the charge carriers trapped at the domain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 85
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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