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Dislocation-Related Photoluminescence In Strain-Relaxed Si1−xGex. Buffer Layer Structures

Published online by Cambridge University Press:  15 February 2011

Kai Shum ,
P. M. Mooney  and
J. O. Chu
Kai Shum
Affiliation:
Department of Electrical Engineering, The City College of the City University of New York, New York, NY 10031
P. M. Mooney
Affiliation:
IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
J. O. Chu
Affiliation:
IBM Research Division, T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
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Abstract

Low-temperature photoluminescence (PL) spectroscopy was used to study electronic states associated with threading dislocations (D lines) in strain-relaxed Si1−xGex layers. The structures investigated were grown by ultra-high vacuum chemical vapor deposition (UHV/CVD) at 550 °C and consist of an Si(001) substrate followed by a step-wise graded buffer layer followed by a thick uniform composition Si1−xGex layer. Variations in the PL intensity and peak position of the four D lines after isochronal annealing at temperatures between 600 and 800 °C have been measured. We show that the large energy shift of the D1 line is due to a change in the local band-gap energy at the dislocation core due to strain-driven diffusion of Ge away from the dislocation core with an activation energy of 2.4 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 325
Copyright
Copyright © Materials Research Society 1997

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