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Development of Scanning Microwave Microscope for High-Throughput Characterization of Combinatorial Dielectric Thin Film

Published online by Cambridge University Press:  17 March 2011

Noriaki Okazaki ,
Parhat Ahmet ,
Toyohiro Chikyow ,
Hiroyuki Odagawa ,
Yasuo Cho ,
Tomoteru Fukumura ,
Masashi Kawasaki ,
Makoto Ohtani ,
Hideomi Koinuma  and
Tetsuya Hasegawa
Noriaki Okazaki
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Parhat Ahmet
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Toyohiro Chikyow
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Hiroyuki Odagawa
Affiliation:
Research Institute of Electrical Communication
Yasuo Cho
Affiliation:
Research Institute of Electrical Communication
Tomoteru Fukumura
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Masashi Kawasaki
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Makoto Ohtani
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Hideomi Koinuma
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan Frontier Collaborative Research Center and 6Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
Tetsuya Hasegawa
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Abstract

A scanning microwave microscope (Sm M) for high-throughput characterization of combinatorial dielectric materials has been developed using a lumped constant resonator probe. The probe consists of a microwave oscillator module equipped with a thin conducting needle and an outer conductor ring, which detects the dielectric constant of the sample just beneath the needle as a frequency shift of the resonator. The quantitative analysis of the dielectric constant for the bulk and the thin-film samples was carried out based on the measurement of gap-length dependence of the frequency shift. The analysis method was successfully applied to the characterization of composition-spread BaxSr1-xTiO3 thin film sample. The evaluation of far-field contribution to the frequency shift was found to be crucial for the accurate determination of dielectric constant especially in the characterization of combinatorial thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 700: Symposium S – Combinatorial and Artificial Intelligence Methods in Materials Science , 2001 , S3.7
Copyright
Copyright © Materials Research Society 2002

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