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Degradation Kinetics of Hydrogenated Amorphous Silicon: The Effect of Embedded Microcrystallites

Published online by Cambridge University Press:  10 February 2011

Yoram Lubianiker
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
Hyun-Chul Jin
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801
John R. Abelson
Affiliation:
Department of Materials Science and Engineering, University of Illinois, Urbana, IL 61801
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Abstract

We have studied the degradation kinetics of undoped a-Si:H films which contain a significant fraction of silicon microcrystallites. The degradation rate is found to be exceptionally slow in the first stage of degradation, then the defect density follows the “normal” t1/3rate and finally saturates. We present a model which relates this abnormal kinetics to the microcrystallites which are embedded in the amorphous matrix.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 39, 292 (1977).Google Scholar
[2] Guha, S., Narasimhan, K.L. and Pietruszko, M.S., J. Appl. Phys. 52, 859 (1981).Google Scholar
[3] Yang, L. and Chen, L.-F., Mat. Res. Soc. Symp. Proc. 336, 669 (1994).Google Scholar
[4] Tsu, D.V., Cho, B.S., Ovshinsky, S.R., Guha, S. and Yang, J., Appl. Phys. Lett. 71, 1317 (1997).Google Scholar
[5] Kwon, D., Lee, H., Cohen, J.D., Jin, H.-C and Abelson, J.R., J. Non-Cryst. Solids, in press.Google Scholar
[6] Pinarbasi, M., Abelson, J.R. and Kushner, M.J., Appl. Phys. Lett. 56, 1685 (1990).Google Scholar
[7] Pinarbasi, M., Maley, N., Myers, A. and Abelson, J.R. and Maley, N., Thin Solid Films 171, 217 (1989).Google Scholar
[8] Michelson, C.E., Gelatos, A.V. and Cohen, J.D., Appl. Phys. Lett. 47, 412 (1985).Google Scholar
[9] Cohen, J.D., in Semiconductors and Semimetals, Vol. 21C, edited by Pankove, J. (Academic, New York, 1984), p. 1.Google Scholar
[10] Stutzmann, M., Jackson, W.B. and Tsai, C.C., Phys. Rev. B 32, 23 (1985).Google Scholar
[11] Graeff, C.F.O, Buhleier, R. and Stutzmann, M., Appl. Phys. Lett. 62, 3001 (1993).Google Scholar
[12] Wu, Z.Y., Siefert, J.M. and Equer, B., J. Non-Cryst. Solids 137–138, 227 (1991).Google Scholar
[13] Yang, L. and Chen, L.-F., Mat. Res. Soc. Symp. Proc. 297, 619 (1993).Google Scholar
[14] Lubianiker, Y. and Cohen, J.D. unpublished.Google Scholar
[15] Vignoli, S., Meaudre, R., Meaudre, M., Cabarrocas, P. Roca I, Godet, C. and Morin, P., J. Non-Cryst. Solids 198–200, 474 (1996).Google Scholar