Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-01T21:26:04.091Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Generation by Proton Irradiation of Semi-Insulating Lec GaAs

Published online by Cambridge University Press:  15 February 2011

A. Castaldin ,
A. Cavallini ,
L. Polenta ,
C. Canali ,
F. Nava ,
E. De La Puentee ,
A. Alvarez  and
J. Jimenez
A. Castaldin
Affiliation:
INFM ETSII, 47011 Valladolid, Spain Dip. Fisica, Universita di Bologna, 40126 Bologna, Italy
A. Cavallini
Affiliation:
INFM ETSII, 47011 Valladolid, Spain Dip. Fisica, Universita di Bologna, 40126 Bologna, Italy
L. Polenta
Affiliation:
INFM ETSII, 47011 Valladolid, Spain Dip. Fisica, Universita di Bologna, 40126 Bologna, Italy
C. Canali
Affiliation:
INFM ETSII, 47011 Valladolid, Spain Dip. Elettronica, University of Modena, Modena, Italy
F. Nava
Affiliation:
Dip. Fisica, University of Modena, Modena, Italy
E. De La Puentee
Affiliation:
Fisica de la Materia Condensada, ETSII, 47011 Valladolid, Spain, jimenez@fmc.uva.es
A. Alvarez
Affiliation:
Fisica de la Materia Condensada, ETSII, 47011 Valladolid, Spain, jimenez@fmc.uva.es
J. Jimenez
Affiliation:
Fisica de la Materia Condensada, ETSII, 47011 Valladolid, Spain, jimenez@fmc.uva.es
Get access

Abstract

High energy and high fluence proton irradiated semi-insulating GaAs has been studied by EBIC, PL mapping, C-V, NTSC, PICTS and p-DLTS. The main defects generated by the irradiation were analyzed. An EL2-like defect was found to be dominant. The generation of this defect annihilates the typical cellular distribution of EL2 in as-grown material. The generated EL2 defects present a different photoquenching behavior than the as-grown EL2 defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 73
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lai, S.T., Alexiev, D. and Nener, B.D.; 1995 J.Appl. Phys. 78, 3686.Google Scholar
2. Aliyu, Y H, Morgan, D V and Bunce, R W; 1993 Phys. Stat. Sol. (a) 135, 119.Google Scholar
3. Pons, D and Bourgoin, J C; 1985 J. Phys. C 18, 3839.Google Scholar
4. Martin, G.M. and Makram-Ebeid, S.; in Deep Centers in Semiconductors, ed. by Pantelides, S.T. (Gordon and Breach Science publishers 1986), p. 399.Google Scholar
5. Alietti, M, Canali, C, Castaldini, A, Cavallini, A, Cetronio, A, Chiossi, C, , D'Auria, Del Papa, C, Lanzieri, C, Nava, F and Vanni, P, 1995 Nucl. Instr. & Meth. Phys. Res. B90, 344.Google Scholar
6. Look, D.C.; in Electrical characterization of GaAs materials and devices (John Wiley & Sons, Chichester 1989).Google Scholar
7. Mooney, P J; 1983 J. Appl. Phys. 54, 208.Google Scholar
8. Look, D C, Fang, Z-Q, Hemsky, J W and Kengkan, P; 1997 Phys. Rev. B 55, 2214.Google Scholar
9. Kuriyama, K, Takahashi, H, Kawahara, H, Hayashi, N, Watanabe, H, Sakamoto, I and Kohno, I; 1990 J. Appl. Phys. 68, 6517.Google Scholar
10. Kuriyama, K, Kawahara, H, Satoh, M and Kawakubo, T; 1988 Appl. Phys. Lett. 53, 1074.Google Scholar
11. Jimenez, J, Alvarez, A, Chafai, M and Bonnafe, J; 1994 Phys.Rev. B 50, 14122.Google Scholar
12. Alvarez, A, Jimenez, J, Gonzalez, M A and Sanz, L F; 1997 Appl. Phys. Lett 70, 3131.Google Scholar
13. Suemitsu, M, Takahashi, H and Miyamoto, N; 1995 Phys.Rev.B 52, 1666.Google Scholar