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Defect and Band Gap Engineering of Amorphous Silicon Solar Cells

Published online by Cambridge University Press:  01 January 1993

R.E.I. Schropp
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80,000, 3508 TA Utrecht,The Netherlands
J.Daey Ouwens
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80,000, 3508 TA Utrecht,The Netherlands
M.B. Von Der Linden
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80,000, 3508 TA Utrecht,The Netherlands
C.H.M. Von Der Werf
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80,000, 3508 TA Utrecht,The Netherlands
W.F. Van Der Weg
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80,000, 3508 TA Utrecht,The Netherlands
P.F.A. Alkemade
Affiliation:
DIMES,Section Submicron Technology, Delft University of Technology, P.O. Box 5046, 2600 GA Delft The Netherlands
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Abstract

This paper demonstrates that the incorporation of an unoptimized, wide band gap a-SiC:H layer near the p-type emitter layer in addition to a graded bandgap ”buffer” layer, leads to improved fill factors and open circuit voltages, in spite of the increased number of recombination sites at the p/i heterojunction. The as deposited as a function of a-SiC:H thickness shows an optimum of 10.5 % at a thickness of 10 – 20 Å. We have further improved this type of cell by incorporating a reverse carbon graded p-type layer and have thus achieved efficiencies in excess of 11.0 %. The cells are all amorphous and do not comprise antireflective coatings or enhanced back reflectors. A new defect engineering scheme to accomplish enhanced stabilized efficiencies of amorphous silicon solar cells is also proposed here.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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