Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-01T21:28:53.616Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystallographic Effects on the Photoelectrochemical Etching of Gratings in Compound Semiconductors

Published online by Cambridge University Press:  28 February 2011

Michael M. Carrabba ,
Nguyet M. Nguyen  and
R. David Rauh
Michael M. Carrabba
Affiliation:
EIC Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
Nguyet M. Nguyen
Affiliation:
EIC Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
R. David Rauh
Affiliation:
EIC Laboratories, Inc., 111 Downey Street, Norwood, MA 02062
Get access

Abstract

Grooves have been etched photoelectrochemically into a (100) n-GaAs surface using a 100 cycle/mm grating mask to define the illuminated area. The degree of mask undercutting and the shape of the groove bottom are shown to be functions of doping density and crystallographic orientation. High doping density gives rise to reduced undercutting, presumably due to a lesser extent of surface diffusion of photogenerated holes.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 665
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kendall, D. L., Ann. Rev. Mater. Sci., 9, 373 (1979).Google Scholar
2. Podlesnik, D. V., Gilgen, H. H., Willner, A. E. and Osgood, R. M. Jr, J. Op. Soc. Am. B, 3, 775 (1986).CrossRefGoogle Scholar
3. Lum, R. M., Glass, A. M., Ostermayer, F. W. Jr, Kohl, P. A., Ballman, A. A. and Logan, R. A., J. Appl. Phys. 57, 39 (1985).Google Scholar
4. Lum, R. M., Ostermayer, F. W. Jr, Kohl, P. A., Glass, A. M. and Ballman, A. A., Appl. Phys. Lett. 47, 269 (1985).Google Scholar
5. Ostermayer, F. W. Jr, Kohl, P. A. and Lum, R. M., J. Appl. Phys. 58, 4390 (1985).Google Scholar
6. Cheng, J. and Kohl, P. A., in Laser-Controlled Chemical Processing of Surfaces, edited by Johnson, A. W., Ehrlich, D. J. and Schlossberg, H. R. (Elsevier Science Publishing Co., New York, 1981), p. 127.Google Scholar
7. Carrabba, M. M., Nguyen, N. M. and Rauh, R. D., Applied Optics (in press).Google Scholar
8. Carrabba, M. M., Nguyen, N. M. and Rauh, R. D., J. Electrochem. Soc. (in press).Google Scholar
9. Carrabba, M. M., Nguyen, N. M. and Rauh, R. D., J. Electrochem. Soc. (submitted for publication).Google Scholar
10. Faktor, M. M. and Stevenson, J. L., J. Electrochem. Soc. 125, 621 (1978).Google Scholar
11. Gerischen, H., Bunsenges Physik Chem. 69, 578 (1965).Google Scholar
12. Kohl, P. A., Wolowodiuk, C., and Ostermayer, F. W. Jr, J. Electrochem. Soc. 130, 2228 (1983).Google Scholar
13. Gatos, H. C. and Lavine, M. C., J. Electrochem. Soc. 107, 427 (1960).Google Scholar
14. Williams, R. E., Gallium Arsenide Processing Techniques (Artech House, Inc., Dedham, MA) p. 101–122.Google Scholar